MTE080A10Q8 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/9 MTE080A10Q8 Preliminary CYStek Product Specification Dual N-Channel Enhancement Mode Power MOSFET MTE080A10Q8 BVDSS 100V 2.8A ID@VGS=10V , TA=25°C 5.0A ID@VGS=10V , TA=70°C RDSON@VGS=10V , ID=2.5A 74mΩ(typ) Features RDSON@VGS=6V , ID=2.0A • Simple drive requirement

  • Low on-resistance
  • Fast switching speed
  • Dual N-ch MOSFET package
  • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTE080A10Q8 SOP-8

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / tape & reel 82mΩ(typ) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products G：Gate D：Drain S：Source Pin 1 Product name

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 2/9 MTE080A10Q8 Preliminary CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 100 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ VGS=10V , TC=25°C 5.0 Continuous Drain Current @ VGS=10V , TC=100°C 3.2 Continuous Drain Current @ VGS=10V , TA=25°C 2.8 (Note 2) Continuous Drain Current @ VGS=10V , TA=70°C ID 2.2 (Note 2) Pulsed Drain Current IDM 30 (Note 1) Avalanche Current @ L=0.1mH IAS 18 A Avalanche Energy @ L=2mH, ID=8A, VDD=25V EAS 64 (Note 4) mJ Power Dissipation for Dual Operation 2 1.6 (Note 2) Power Dissipation for Single Operation PD 0.9 (Note 3) W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 25 Thermal Resistance, Junction-to-ambient, max, dual 62.5 78 (Note 2)Thermal Resistance, Junction-to-ambient, max , single operation RθJA 135 (Note 3) °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3. Surface mounted on minimum copper pad, pulse width≤10s. 4. 100% tested by conditions of L=0.1mH, VGS=10V , IAS=10A, VDD=25V . Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V , ID=250μA VGS(th) 2 - 4 V VDS =VGS, ID=250μA GFS *1 - 5.9 - S VDS =10V , ID=5A IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS =80V , VGS =0V IDSS - - 25 μA VDS =80V , VGS =0V , Tj=70°C - 74 98 VGS =10V , ID=2.5A RDS(ON) *1 - 82 130 mΩ VGS =6V , ID=2A Dynamic Qgs *1, 2 - 1.8 - Qgd *1, 2 - 2.0 - nC VDS=50V , ID=2.7A, VGS=10V

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 3/9 MTE080A10Q8 Preliminary CYStek Product Specification tr *1, 2 - 17.4 26.1 tf *1, 2 - 10 15 ns VDS=50V , ID=2.5A, VGS=10V , RG=6Ω Ciss - 298 447 Coss - 41 62 Crss - 17 26 pF VGS=0V , VDS=50V , f=1MHz Rg - 4.9 - Ω f=1MHz Source-Drain Diode IS *1 - - 2.8 ISM *3 - - 6.5 A VSD *1 - 0.77 1.2 V IS=2A, VGS=0V trr *1 - 21.8 - ns Qrr *1 - 21.7 - nC IF=2A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 4/9 MTE080A10Q8 Preliminary CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V 5.5V 4.5V VGS=4V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS =6V 10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 700 800 900 1000 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=2.5A RDS( ON)@Tj=25°C : 74mΩ typ VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=2.5A

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 5/9 MTE080A10Q8 Preliminary CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0 1 02 03 04 05 0 NormalizedThreshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Ciss VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Crss Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) ID=2.7A VDS=65V VDS=25V VDS=50V Maximum Safe Operating Area 0.001 0.01 0.1 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limited TA=25°C, Tj=150°, VGS=10V RθJA=78°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 0.5 1.5 2.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 6/9 MTE080A10Q8 Preliminary CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0123456789 1 0 V GS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation (Please see Note on page 2) 100 150 200 250 300 350 400 450 500 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=78°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 7/9 MTE080A10Q8 Preliminary CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 8/9 MTE080A10Q8 Preliminary CYStek Product Specification Recommended wave soldering condition Peak Temperature Soldering Time Product Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 150°C 200°C 60-120 seconds 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) − Time (tL) 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 9/9 MTE080A10Q8 Preliminary CYStek Product Specification SOP-8 Dimension Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code Device Name E080 A10 c 0.170 0.006 0.010 θ 0 8° 0 8° 0.250 D 4.700 5.100 0.185 0.200 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.