MTE030N15RH8_16 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and Halogen-free package Symbol Outline
Ordering Information
MTE030N15RH8-0-T6-G DFN 5 ×6 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel DFN5×6 MTE030N15RH8 G：Gate D：Drain S：Source BVDSS 150V ID@VGS=10V , TC=25°C 24.7A ID@VGS=10V , TA=25°C 5.5A RDSON(TYP) VGS=10V , ID=4.6A 29.3mΩ VGS=6V , ID=3.9A 33.6mΩ Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name Pin 1 S S S G D D D D S S S G D D D D Pin 1
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 2/10 MTE030N15RH8 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol 10s Steady State Unit Drain-Source V oltage VDS 150 V Gate-Source V oltage VGS ±20 Continuous Drain Current @ TC=25C, VGS=10V (Note 1) ID 24.7 A Continuous Drain Current @ TC=100C, VGS=10V (Note 1) 15.6 Continuous Drain Current @ TA=25C, VGS=10V (Note 2) IDSM 8.3 5.5 Continuous Drain Current @ TA=70C, VGS=10V (Note 2) 6.6 4.4 Continuous Drain Current @ TA=85C, VGS=10V (Note 2) 6.0 4.0 Pulsed Drain Current (Note 3) IDM 83 *1 Avalanche Current @ L=0.1mH (Note 3) IAS 55 Avalanche Energy @ L=1mH, ID=22A, VDD=50V (Note 4) EAS 242 mJ Repetitive Avalanche Energy @ L=0.05mH (Note 3) EAR 5 *2 Total Power Dissipation TC=25℃ (Note 1) PD 50 W TC=100℃ (Note 1) 20 TA=25C (Note 2) PDSM 5.7 2.5 TA=70C (Note 2) 4.0 1.8 TA=85C (Note 2) 3.6 1.6 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Symbol Typical Maximum Unit Thermal Resistance, Junction-to-ambient (Note 2) t≤10s RθJA 18 22 C/W Steady State 42 50 Thermal Resistance, Junction-to-case RθJC 2.2 2.5 Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4.100% tested by conditions of L=1mH, IAS=10A, VGS=10V , VDD=50V
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 3/10 MTE030N15RH8 CYStek Product Specification Characteristics (TC=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V, ID=250μA VGS(th) 2 - 4 VDS = VGS, ID=250μA GFS *1 - 11.8 - S VDS =10V, ID=5A IGSS - - ±100 nA VGS=±20V IDSS - - 1 μA VDS =120V , VGS =0V - - 25 VDS =120V , VGS =0V , Tj=125C RDS(ON) *1 - 29.3 38 mΩ VGS =10V, ID=4.6A 33.6 47 VGS =6V, ID=3.9A Dynamic Ciss - 1871 - pF VGS=0V , VDS=80V , f=1MHz Coss - 106 - Crss - 11.7 - Qg *1, 2 - 47.9 - nC VDS=80V , VGS=10V , ID=15A Qgs *1, 2 - 8.5 - Qgd *1, 2 - 5.5 - ns VDD=75V , ID=4.6A, VGS=10V , RG=3Ω tr *1, 2 - 19.6 - tf *1, 2 - 10.6 - Rg - 1.2 - Ω f=1MHz Source-Drain Diode IS *1 - - 24.7 A ISM *3 - - 83 VSD *1 - 0.75 1.2 V IS=2A, VGS=0V - 0.78 1.3 IS=4.6A, VGS=0V trr - 56 - ns IF=4.6A, dIF/dt=100A/μs Qrr - 117 - nC Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 4/10 MTE030N15RH8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 2 4 6 8 10 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V, 9V VGS=5.5V 6.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=6V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 2 4 6 8 10 12 14 16 18 20 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=4.6A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=4.6A RDS(ON)@Tj=25°C : 29.3mΩ typ.
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 5/10 MTE030N15RH8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=4.6A VDS=120V VDS=30V VDS=75V Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 100μs RDSON Limited TA=25°C, VGS=10V,Tj=150°C RθJA=50°C/W, Single Pulse 1s Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, Tj(max)=150°C, RθJA=50°C/W
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 6/10 MTE030N15RH8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 2 4 6 8 10 12 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Maximum Power Dissipation, Nunction to Ambient 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=50°C/W Transient Thermal Response Curves 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 7/10 MTE030N15RH8 CYStek Product Specification Recommended Soldering Footprint & Stencil Design unit : mm
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 8/10 MTE030N15RH8 CYStek Product Specification Reel Dimension Carrier Tape Dimension Pin #1
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 9/10 MTE030N15RH8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : 2016.11.03 Page No. : 10/10 MTE030N15RH8 CYStek Product Specification DFN5×6 Dimension DIM Millimeters Inches DIM Millimeters Inches D2 4.824 4.976 0.190 0.196 θ 10° 12° 10° 12° E2 5.674 5.826 0.223 0.229 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking : 8-Lead DFN5×6 Plastic Package Date Code Device Name B030 N15R