MTE013N08Q8 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 1/9 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTE013N08Q8 BVDSS 80V 11A ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V , ID=8.9A 9.3 mΩ(typ) Features RDS(ON)@VGS=6V , ID=5.6A 11.4 mΩ(typ)• Single Drive Requirement • Low On-resistance

  • Fast Switching Characteristic
  • Pb-free & Halogen-free package Symbol Outline MTE013N08Q8 SOP-8 D D D D G G：Gate D：Drain S S S S：Source Pin 1

Ordering Information

SOP-8 MTE013N08Q8-0-T3-G (RoHS compliant & Halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant MTE013N08Q8 and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 2/9 MTE013N08Q8 CYStek Product Specification Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 80 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TA=25°C, VGS=10V 11 Continuous Drain Current @ TA=70°C, VGS=10V ID 8.8 Pulsed Drain Current IDM 62 *1 Avalanche Current @ L=0.1mH IAS 29 A Avalanche Energy @ L=1mH, ID=27A, VDD=30V EAS 364 *3 Repetitive Avalanche Energy @ L=0.05mH EAR 1.6 *2 mJ TA=25 °C 3.1 Total Power Dissipation TA=70 °C PD 2 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% *3. 100% tested by conditions of L=0.1mH, IAS=15A, VGS=10V , VDD=30V Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case RθJC 20 Thermal Resistance, Junction-to-ambient (Note) RθJA 40 °C/W Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 80 - - VGS=0V , ID=250μA VGS(th) 2 - 4 V VDS = VGS, ID=250μA GFS - 18 - S VDS =10V , ID=20A IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS =64V , VGS =0V IDSS - - 25 μA VDS =64V , VGS =0V , Tj=125°C - 9.3 13 VGS =10V , ID=8.9A *RDS(ON) - 11.4 18 mΩ VGS =6V , ID=5.6A Dynamic Qg *1, 2 - 31.5 47 Qgs *1, 2 - 7.1 - Qgd *1, 2 - 9.7 - nC VDS=40V , VGS=10V , ID=8.9A Ciss - 1419 - Coss - 182 - Crss - 90 - pF VDS=40V , VGS=0V , f=1MHz

CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 3/9 MTE013N08Q8 CYStek Product Specification Characteristics (Cont. TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Dynamic tr *1, 2 - 23 - tf *1, 2 - 12 - ns VDS=40V , ID=8.9A, VGS=10V , RGS=1Ω Rg - 3 - Ω f=1MHz Source-Drain Diode Ratings and Characteristics IS *1 - - 4 ISM *3 - - 16 A trr - 22.6 - ns Qrr - 23.4 - nC IF=8.9A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 4/9 MTE013N08Q8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V,8V,7V,6V VGS=4V 4.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=6V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Tj=25°C Tj=150°C Drain-Source On-State Resistance vs Junction Tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=8.9A RDS( ON)@Tj=25°C : 9.3mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=8.9A

CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 5/9 MTE013N08Q8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss f=1MHz Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=15V VDS=10V Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=8.9A VDS=64V VDS=40V VDS=16V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 100ms 10ms 100μs 1ms RDS(ON) Limited TA=25°C, Tj=150°C VGS=10V,RθJA=40°C/W Single Pulse Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C,RθJA=40°C/W,VGS=10V

CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 6/9 MTE013N08Q8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0123456789 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=40°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W

CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 7/9 MTE013N08Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 8/9 MTE013N08Q8 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.

CYStech Electronics Corp. Spec. No. : C161Q8 Issued Date : 2017.03.17 Revised Date : Page No. : 9/9 MTE013N08Q8 CYStek Product Specification SOP-8 Dimension 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code Device Name E013 N08 Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, A u g→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 Marking: c 0.170 0.250 0.010 θ 0 8° 0 8° 0.006 D 4.700 5.100 0.185 0.200 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.