MTDN1034C6 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • High speed switching
  • Low-voltage drive(1.5V)
  • Easily designed drive circuits
  • Easy to use in parallel
  • Pb-free package Equivalent Circuit Outline The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol Limits Unit Drain-Source V oltage VDSS 30 V Gate-Source V oltage VGSS ±8 V Continuous Drain Current @ VGS=4.5V , TA=25°C 0.3 Continuous Drain Current @ VGS=4.5V , TA=85°C ID 0.22 Pulsed Drain Current IDM 1.6 (Note 1) A Power Dissipation Pd 150 (Note 2) mW Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 °C Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2. 120mW per element must not be exceeded. SOT-563 D1 G2 S2 S1 G1 D2 BVDSS 30V ID 0.3A VGS=4.5V , ID=200mA 0.85Ω 1.23Ω VGS=2.5V , ID=175mA MTDN1034C6 Tr1 Tr2 VGS=1.8V , ID=150mA 1.8Ω RDSON(TYP) VGS=1.5V , ID=40mA 2.3Ω

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 2/ 8 MTDN1034C6 CYStek Product Specification Electrical Characteristics (Ta=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS* 30 - - V VGS=0, ID=10μA VGS(th) 0.5 0.78 1.1 V VDS=VGS, ID=250μA IGSS - - ±1 μA VGS=±8V , VDS=0 IDSS - - 100 nA VDS=30V , VGS=0 - 0.85 1.5 VGS=4.5V , ID=200mA - 1.23 3 VGS=2.5V , ID=175mA - 1.8 4 VGS=1.8V , ID=150mA RDS(ON)* - 2.3 5 Ω VGS=1.5V , ID=40mA GFS - 460 - mS VDS=10V, ID=200mA Dynamic Ciss - 33.5 - Coss - 6.1 - Crss - 2.5 - pF VDS=15V , VGS=0, f=1MHz Qg - 495 - Qgs - 49 - Qgd - 175 - pC VDS=15V , ID=300mA, VGS=4.5V td(on) - - 50 tr - - 25 td(off) - - 50 tf - - 25 ns VDD=15V , ID=200mA, VGS=4.5V , RG=10Ω Source-Drain Diode IS - - 0.3 ISM - - 2 A VSD - 0.81 1 V IS=150mA, VGS=0V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTDN1034C6 SOT-563 (Pb-free and halogen-free package) 3000 pcs / Tape & Reel KL

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 3/ 8 MTDN1034C6 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 012345 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 2.5V VGS=1.5V 3.5V 4V5.5, 5V, 4.5V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.4 0.8 1.2 1.6 2.4 2.8 3.2 3.6 0.01 0.1 1 I D, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=2.5V VGS=1.8V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0.5 1.5 2.5 3.5 0123456789 1 0 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=220mA ID=190mA ID=100mA ID=50mA Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=2.7V, ID=190mA VGS=2.5V, ID=50mA VGS=4.5V, ID=220mA

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 4/ 8 MTDN1034C6 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=833°C/W Gate Charge Characteristics Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=15V ID=300mA Maximum Drain Current vs JunctionTemperature 0.05 0.1 0.15 0.2 0.25 0.3 0.35 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=4.5V, RθJA=833°C/W Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) μ100 s 1ms 10ms TA=25°C, Tj=150°C, VGS=4.5V, RθJA=833°C/W Single Pulse 100ms DC

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 5/ 8 MTDN1034C6 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 V GS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V 150°C 25°C -40°C0°C Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=833°C/W

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 6/ 8 MTDN1034C6 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 7/ 8 MTDN1034C6 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 8/ 8 MTDN1034C6 CYStek Product Specification SOT-563 Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. 6-Lead SOT-563 Plastic Surface Mounted Package CYStek Package Code: C6 Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Marking: Product Code Date Code: Year+Month Year: 6→2006, 7→2007 KL DIM Min. Max. Min. Max. D 0.059 0.067 1.500 1.700 θ 7° REF 7° REF Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.