MTD9D0N06H8 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Repetitive Avalanche Rated
  • Pb-free lead plating and Halogen-free package Symbol Outline MTD9D0N06H8 DFN5×6 Pin 1 G：Gate D：Drain S：Source

Ordering Information

DFN 5 ×6 MTD9D0N06H8-0-T6-G (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 2/10 MTD9D0N06H8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol 10s Steady State Unit Drain-Source V oltage VDS 60 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C, VGS=10V (silicon limit) (Note 1) Continuous Drain Current @ TC=25°C, VGS=10V (package limit) (Note 1) Continuous Drain Current @ TC=100°C, VGS=10V (Note 1) ID Continuous Drain Current @ TA=25°C, VGS=10V (Note 2) 20.8 13.8 Continuous Drain Current @ TA=70°C, VGS=10V (Note 2) 16.6 11.0 Continuous Drain Current @ TA=85°C, VGS=10V (Note 2) IDSM 15.0 9.9 Pulsed Drain Current (Note 3) IDM 224 *1 Avalanche Current (Note 3) IAS 40 A Avalanche Energy @ L=0.1mH, ID=40A, VDD=30V (Note 2, 4) EAS 80 Repetitive Avalanche Energy @ L=0.05mH (Note 3) EAR 10 *2 mJ TC=25℃ (Note 1) 83 TC=100℃ (Note 1) PD 33 TA=25°C (Note 2) 5.7 2.5 TA=70°C (Note 2) 4.0 1.8 Total Power Dissipation TA=85°C (Note 2) PDSM 3.6 1.6 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Typical Maximum Unit t≤10s 18 22 Thermal Resistance, Junction-to-ambient (Note 2) Steady State RθJA 42 50 Thermal Resistance, Junction-to-case RθJC 1.4 1.5 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4.100% tested by conditions of L=0.1mH, IAS=10A, VGS=10V , VDD=30V

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 3/10 MTD9D0N06H8 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - VGS=0V , ID=250μA VGS(th) 1.4 - 2.6 V VDS = VGS, ID=250μA GFS *1 - 30 - S VDS =10V , ID=30A IGSS - - ±100 nA VGS=±20V - - 1 VDS =48V , VGS =0V IDSS - - 25 μA VDS =48V , VGS =0V , Tj=125°C Dynamic Ciss - 1619 - Coss - 275 - Crss - 143 - pF VGS=0V , VDS=25V , f=1MHz Qg *1, 2 - 42.8 - Qgs *1, 2 - 5.8 - Qgd *1, 2 - 15.6 - nC VDS=48V , VGS=10V , ID=25A tr *1, 2 - 22.4 - td(OFF) *1, 2 - 74 - tf *1, 2 - 36 - ns VDS=30V , ID=1A, VGS=10V , RGS=6Ω Rg - 4 - Ω f=1MHz Source-Drain Diode IS *1 - - 56 ISM *3 - - 224 A VSD *1 - 0.82 1.2 V IS=25A, VGS=0V trr - 18 - ns Qrr - 12 - nC IF=25A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 4/10 MTD9D0N06H8 CYStek Product Specification Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 5/10 MTD9D0N06H8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 012345 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V,9V,8V,7V, 6V VGS=3.5V 4.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V VGS=3V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=25A RDS( ON)@Tj=25°C : 5.1mΩ VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=25A

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 6/10 MTD9D0N06H8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 1 02 03 04 05 0 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=25A VDS=30V VDS=48V Maximum Safe Operating Area 0.1 100 1000 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=150°C VGS=10V, RθJC=1.5°C/W Single Pulse DC RDSON Limited 10ms 1ms 100ms 100μs Maximum Drain Current vs CaseTemperature 100 25 50 75 100 125 150 175 TC, CaseTemperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=1.5°C/W, Single Pulse Silicon Limit Package Limit

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 7/10 MTD9D0N06H8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 02468 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Maximum Power Dissipation 400 800 1200 1600 2000 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150C TC=25°C RθJC=1.5°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5°C/W

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 8/10 MTD9D0N06H8 CYStek Product Specification Reel Dimension Carrier Tape Dimension Pin #1

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 9/10 MTD9D0N06H8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 10/10 MTD9D0N06H8 CYStek Product Specification DFN5×6 Dimension Millimeters Inches Millimeters Inches Marking : 0.047 0.055 D2 4.824 4.976 0.190 0.196 θ 10° 12° 10° 12° E2 5.674 5.826 0.223 0.229 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 8-Lead DFN5×6 Plastic Package Date Code D9D0 Device Name N06