MTC9930Q8

MTC9930Q8 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 12

Technical content

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / tape & reel MTC9930Q8 SOP-8 G：Gate S：Source D：Drain P2G N2D/P2D P1S/P2S P1G N1S/N2S N2G N1D/P1D Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products N1G Pin #1 Product name

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 2/12 MTC9930Q8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BVDSS 30 -30 Gate-Source V oltage VGS ±25 ±25 V TA=25 °C, VGS=10V (-10V) 6 -4.4 Continuous Drain Current (Note 2) TA=70 °C, VGS=10V (-10V) ID 4.8 -3.5 Pulsed Drain Current (Note 1) IDM 24 -20 A TA=25°C 1.38 Power Dissipation TA=70°C PD 0.88 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 36 Thermal Resistance, Junction-to-ambient, max RθJA 90 (Note 2) °C/W Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - VGS=0V , ID=250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±25V , VDS=0V - - 1 VDS=30V , VGS=0V IDSS - - 25 μA VDS=24V , VGS=0V , Tj=70°C - 17 24 ID=5A, VGS=10V *RDS(ON) - 21 30 mΩ ID=3A, VGS=4.5V *GFS - 6.7 - S VDS=5V , ID=5A Dynamic Ciss - 496 750 Coss - 61 - Crss - 47 - pF VDS=25V , VGS=0V , f=1MHz *td(ON) - 6.2 - *tr - 17.2 - *td(OFF) - 30.2 - *tf - 7.6 - ns VDS=15V , ID=1A, VGS=10V , RG=6Ω *Qg - 5.6 9 *Qgs - 1.9 - *Qgd - 2.1 - nC VDS=15V , ID=6A, VGS=4.5V Body Diode *VSD - 0.78 1.2 V VGS=0V , IS=1.2A *trr - 7.7 - ns *Qrr - 3.3 - nC IF=5A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 3/12 MTC9930Q8 CYStek Product Specification P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - VGS=0V , ID=-250μA VGS(th) -1.0 - -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±25V , VDS=0V - - -1 VDS=-30V , VGS=0V IDSS - - -25 μA VDS=-24V , VGS=0V , Tj=70°C - 35 48 ID=-4A, VGS=-10V *RDS(ON) - 46 70 mΩ ID=-2A, VGS=-4.5V *GFS - 7.8 - S VDS=-10V , ID=-5A Dynamic Ciss - 597 900 Coss - 63 - Crss - 51 - pF VDS=-25V , VGS=0V , f=1MHz *td(ON) - 5.6 - *tr - 17.6 - *td(OFF) - 64.4 - *tf - 33.8 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=6Ω *Qg - 6.7 11 *Qgs - 2.2 - *Qgd - 2.5 - nC VDS=-15V , ID=-4.4A, VGS=-4.5V Body Diode *VSD - -0.78 -1.2 V VGS=0V , IS=-1.2A *trr - 7.7 - ns IF=-4.5A, dIF/dt=100A/μs *Qrr - 3.0 - nC *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 4/12 MTC9930Q8 CYStek Product Specification Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 01234 5 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V, 9V, 8V, 7V, 6V, 5V, 4V 3.5V VGS=2.5V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 02468 1 Tj=25°C Tj=150°C VGS=0V Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=5A RDSON@Tj=25°C : 17mΩ typ. VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=5A

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 5/12 MTC9930Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 100 1000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold VoltageID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=6A VDS=15V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TA=25°C, Tj=150°C VGS=10V, RθJA=90°C/W Single Pulse DC 100ms RDSON Limited 100μs 10ms 1ms Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C VGS=10V RθJA=90°C/W

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 6/12 MTC9930Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 1000 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=90°C/W Typical Transfer Characteristics 012345 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=90°C/W

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 7/12 MTC9930Q8 CYStek Product Specification Typical Characteristics : Q2( P-channel) Typical Output Characteristics 01234 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage -ID=250μA, VGS=0V 10V,9V,8V,7V,6V,5V -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) 3.5V -VGS=2.5V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=4.5V -VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 DR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) 1 0 Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 450 500 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance -VGS=10V, -ID=4A RDSON@Tj=25°C : 35mΩ typ. -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) -ID=4A

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 8/12 MTC9930Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Capacitance vs Drain-to-Source Voltage 100 1000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage -ID=250μA -ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) -VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-4.4A VDS=-15V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) TA=25°C, Tj=150°C VGS=-10V, RθJA=90°C/W Single Pulse DC RDSON Limited 100μs 1ms 10ms 100ms Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C VGS=-10V RθJA=90°C/W

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 9/12 MTC9930Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 1000 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=90°C/W Typical Transfer Characteristics 012345 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=90°C/W

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 10/12 MTC9930Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 11/12 MTC9930Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2016.06.16 Revised Date : Page No. : 12/12 MTC9930Q8 CYStek Product Specification SOP-8 Dimension 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: Date Code Device Name 9930 Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, A u g→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 c 0.170 0.250 0.006 0.010 θ 0 8° 0 8° D 4.700 5.100 0.185 0.200 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.