MTC7540BDH8

MTC7540BDH8 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 14

Technical content

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

MTC7540BDH8-0-T6-G DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel DFN5×6 MTC7540BDH8 G：Gate S：Source D：Drain N-CH P-CH BVDSS 14V -14V ID@VGS=4.5V(-4.5V), TA=25°C 10.6A -9.5A ID@VGS=4.5V(-4.5V), TA=70°C 8.5A -7.6A ID@VGS=4.5V(-4.5V), TC=25°C 25.8A -23.0A ID@VGS=4.5V(-4.5V), TC=100°C 16.3A -14.6A RDSON(typ)@VGS=4.5V(-4.5V) 15.7mΩ 21.3mΩ RDSON(typ)@VGS=2.5V(-2.5V) 24.4mΩ 32.2mΩ Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 2/14 MTC7540BDH8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits N-channel P-channel Parameter Symbol 10s steady 10s steady Unit Drain-Source Breakdown V oltage BVDSS 14 -14 Gate-Source V oltage VGS ±8 ±8 V TA=70 °C, VGS=4.5V (-4.5V) IDSM 8.5 5.4 -7.6 -4.9 Continuous Drain Current TC=100 °C, VGS=4.5V (-4.5V) ID 16.3 -14.6 Pulsed Drain Current (Note 1 & 2) IDM 27 -24 A TA=25 °C steady state 1.4 (Note 3) TA=70 °C steady state PDSM 0.8 (Note 3) TC=25 °C 21 Power Dissipation TC=100 °C PD 8.4 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 6 t≤10s 35 Thermal Resistance, Junction-to-ambient, max (Note 3) Steady state RθJA 85 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 14 - - VGS=0V , ID=250μA VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±8V , VDS=0V - - 1 VDS=14V , VGS=0V IDSS - - 25 μA VDS=10V , VGS=0V , Tj=55°C *GFS - 10 - S VDS=5V , ID=5A Dynamic Ciss - 390 - Coss - 109 - Crss - 95 - pF VDS=10V , VGS=0V , f=1MHz *td(ON) - 6.8 - *tr - 21 - *td(OFF) - 25.8 - *tf - 11.2 - ns VDS=6V , ID=1A, VGS=4.5V , RG=6Ω

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 3/14 MTC7540BDH8 CYStek Product Specification *Qg - 5 - *Qgs - 0.7 - *Qgd - 1.4 - nC VDS=10V , ID=7.8A, VGS=4.5V Body Diode *IS - - 2.9 t≤10s *ISM - - 12 A *VSD - 0.83 1.2 V VGS=0V , IS=2.9A *trr - 10.2 - ns *Qrr - 1.7 - nC IF=2.9A dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -14 - - VGS=0V , ID=-250μA VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±8V , VDS=0V - - -1 VDS=-12V , VGS=0V IDSS - - -25 μA VDS=-10V , VGS=0V , Tj=55°C *GFS - 8.9 - S VDS=-5V , ID=-5A Dynamic Ciss - 1085 - Coss - 224 - Crss - 192 - pF VDS=-10V , VGS=0V , f=1MHz *td(ON) - 13.6 - *tr - 25.2 - *td(OFF) - 97 - *tf - 64.6 - ns VDS=-6V , ID=-1A, VGS=-4.5V , RG=6Ω *Qg - 11.6 - *Qgs - 2.1 - *Qgd - 2.4 - nC VDS=-10V , ID=-8.9A, VGS=-4.5V Body Diode *IS - - -2.9 t≤10s *ISM - - -12 A *VSD - -0.82 -1.2 V VGS=0V , IS=-2.9A *trr - 11 - ns *Qrr - 3 - nC IF=-2.9A dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 4/14 MTC7540BDH8 CYStek Product Specification Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 5/14 MTC7540BDH8 CYStek Product Specification Recommended Stencil Design Note : 1. Stencil thickness 5 mil (0.127mm) 2. May need to be adjusted to specific requirements.

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 6/14 MTC7540BDH8 CYStek Product Specification Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 01234 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current (A) 5V, 4V,3.5V 2.5V VGS=1.5V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=2.5V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=4.5V, ID=11.8A RDSON@Tj=25°C : 15.7mΩ typ VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=11.8A

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 7/14 MTC7540BDH8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 100 1000 0123456789 1 0 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0123456 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=7.8A VDS=10V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TA=25°C, Tj=150°C VGS=4.5V, RθJA=85°C/W Single Pulse DC 100ms RDSON Limited 100μs 10ms 1ms 10s Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C VGS=4.5V RθJA=85°C/W

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 8/14 MTC7540BDH8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=85°C/W Typical Transfer Characteristics 012345 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=85°C/W

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 9/14 MTC7540BDH8 CYStek Product Specification Typical Characteristics : Q2( P-channel) Typical Output Characteristics 01234 5 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage -ID=250μA, VGS=0V -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) 5V,4V,3.5V 2.5V -VGS=1.5V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=2.5V -VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance -VGS=4.5V, -ID=8.9A RDSON@Tj=25°C : 21.3mΩ typ -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) -ID=8.9A

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 10/14 MTC7540BDH8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0123456789 1 0 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage -ID=250μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) -VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-8.9A VDS=-10V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) TA=25°C, Tj=150°C VGS=-4.5V, RθJA=85°C/W Single Pulse DC RDSON Limited 100μs 1ms 10ms 100ms 10s Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C -VGS=4.5V RθJA=85°C/W

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 11/14 MTC7540BDH8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=85°C/W Typical Transfer Characteristics 012345 -VGS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=85°C/W

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 12/14 MTC7540BDH8 CYStek Product Specification Reel Dimension Carrier Tape Dimension Pin #1

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 13/14 MTC7540BDH8 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 14/14 MTC7540BDH8 CYStek Product Specification DFN5×6 Dimension Millimeters Inches F 1.60 REF 0.063 REF K 1.60 REF 0.063 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Date Code 7540BDevice ame N 8-Lead DFN5×6 Plastic Package