MTC6322KS6R

MTC6322KS6R CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 12

Technical content

Features

• Low on-resistance
• ESD protected
• High speed switching
• Low-voltage drive
• Pb-free package Equivalent Circuit Outline The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BVDSS 30 -30 V Gate-Source V oltage VGS ±8 ±8 V Continuous Drain Current @TA=25 °C, VGS=4.5V(-4.5V) ID 0.45 -0.45 A Continuous Drain Current @TA=70 °C, VGS=4.5V(-4.5V) ID 0.36 -0.36 A Pulsed Drain Current (Note 1) IDM 1.8 -1.8 A Power Dissipation @TA=25°C 0.30 Power Dissipation @TA=70°C PD 0.18 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3.Surface mounted on minimum pad of FR-4 board, t≤5s. SOT-363R MTC6322KS6R Tr1 Tr2 N-CH P-CH BVDSS 30V -30V ID 0.45A -0.45A RDSON(typ.) @VGS=(-)4.5V 0.86Ω 0.98Ω RDSON(typ.) @VGS=(-)2.7V 1.2Ω 1.44Ω

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 2/ 12 MTC6322KS6R CYStek Product Specification Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note) Rth,ja 415 °C/W Note : Surface mounted on minimum pad of FR-4 board, t≤5s. N-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - VGS=0, ID=250μA VGS(th) 0.5 0.8 1.2 V VDS=VGS, ID=250μA IGSS - - ±5 VGS=±8V , VDS=0 - - 1 VDS=30V , VGS=0 IDSS - - 10 μA VDS=24V , VGS=0 (Tj=70°C) *GFS - 0.6 - S VDS=5V , ID=450mA Dynamic Ciss - 33.5 - Coss - 6.1 - Crss - 2.5 - pF VDS=15V , VGS=0, f=1MHz td(ON) - 3 - tr - 5 - td(OFF) - 9 - tf - 5 - ns VDS=15V , ID=450mA, VGS=4.5V , RG=50Ω Qg - 0.51 - Qgs - 0.05 - Qgd - 0.18 - nC VDS=15V , ID=450mA, VGS=4.5V Source-Drain Diode *IS - - 0.45 *ISM - - 1.8 A *VSD - 0.9 1.2 V VGS=0V , IS=450mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 3/ 12 MTC6322KS6R CYStek Product Specification P-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -0.5 -0.9 -1.2 V VDS=VGS, ID=-250μA IGSS - - ±5 VGS=±8V , VDS=0 - - -1 VDS=-30V , VGS=0 IDSS - - -10 μA VDS=-24V , VGS=0 (Tj=70°C) *GFS - 0.6 - S VDS=-5V , ID=-450mA Dynamic Ciss - 55.6 - Coss - 9.3 - Crss - 5.7 - pF VDS=-15V , VGS=0, f=1MHz td(ON) - 5 - tr - 6 - td(OFF) - 15 - tf - 11 - ns VDS=-15V , ID=-450mA, VGS=-4.5V , RG=50Ω Qg - 0.75 - Qgs - 0.09 - Qgd - 0.25 - nC VDS=-15V , ID=-450mA, VGS=-4.5V Source-Drain Diode *IS - - -0.45 *ISM - - -1.8 A *VSD - -0.89 -1.2 V VGS=0V , IS=-450mA

Ordering Information

Device Package Shipping Marking MTC6322KS6R SOT-363 (Pb-free lead plating and Halogen-free package) 3000 pcs / Tape & Reel 6322

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 4/ 12 MTC6322KS6R CYStek Product Specification N-Channel Typical Characteristics Typical Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 012345 V DS, Drain-Source Voltage(V) ID, Drain Current (A) 2.5V VGS=1.5V 3.5V 4V5V, 4.5V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.4 0.8 1.2 1.6 2.4 2.8 3.2 3.6 0.01 0.1 1 I D, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=2.7V VGS=1.8V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0.5 1.5 2.5 3.5 0123456789 1 0 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=220mA ID=190mA ID=100mA ID=50mA Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=2.7V, ID=190mA VGS=2.5V, ID=50mA VGS=4.5V, ID=220mA

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 5/ 12 MTC6322KS6R CYStek Product Specification N-Channel Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=415°C/W Gate Charge Characteristics Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=15V ID=450mA Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=4.5V, RθJA=415°C/W Single Pulse RDS(ON) Limit Maximum Drain Current vs JunctionTemperature 0.1 0.2 0.3 0.4 0.5 0.6 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=4.5V, RθJA=415°C/W

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 6/ 12 MTC6322KS6R CYStek Product Specification N-Channel Typical Characteristics(Cont.) Typical Transfer Characteristics 100 150 200 250 300 0 0.5 1 1.5 2 2.5 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V 150°C 25°C -40°C0°C Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=415°C/W

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 7/ 12 MTC6322KS6R CYStek Product Specification P-Channel Typical Characteristics Typical Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) 2.5V -VGS=1.5V 3.5V4V5V, 4.5V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.4 0.8 1.2 1.6 2.4 2.8 3.2 3.6 0.01 0.1 1 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=4.5V -VGS=2.7V -VGS=1.8V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0123456789 1 0 GS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-410mA ID=-250mA ID=-100mA Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-410mA VGS=-1.8V, ID=-100mA VGS=-2.7V, ID=-250mA

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 8/ 12 MTC6322KS6R CYStek Product Specification P-Channel Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=415°C/W Gate Charge Characteristics Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-15V ID=-450mA Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=415°C/W Single Pulse RDS(ON) Limit Maximum Drain Current vs JunctionTemperature 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-4.5V, RθJA=415°C/W

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 9/ 12 MTC6322KS6R CYStek Product Specification P-Channel Typical Characteristics(Cont.) Typical Transfer Characteristics 100 00 . 5 11 . 5 2 -VGS, Gate-Source Voltage(V) -ID, Drain Current (mA) VDS=-10V 150°C 25°C -40°C 0°C Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=-10V VDS=-5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=415°C/W

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 10/ 12 MTC6322KS6R CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 11/ 12 MTC6322KS6R CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C829S6R Issued Date : 2012.08.10 Revised Date : Page No. : 12/ 12 MTC6322KS6R CYStek Product Specification SOT-363 Dimension Pin 6. Drain Marking: 6322 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) 1 (D1) D 2.000 2.200 0.079 0.087 θ 0° 8° 0° 8° E 1.150 1.350 0.045 0.053 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.