MTC5806AQ8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Features

  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free package Equivalent Circuit Outline MTC5806AQ8 G：Gate S：Source D：Drain SOP-8

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 2/12 MTC5806AQ8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BVDSS 60 -60 V Gate-Source V oltage VGS ±20 ±20 V Continuous Drain Current @TA=25 °C (Note 2) ID 4.5 -3.5 A Continuous Drain Current @TA=70 °C (Note 2) ID 3.6 -2.8 A Pulsed Drain Current (Note 1) IDM 20 -20 A Power Dissipation for Dual Operation 2 1.6 (Note 2) Power Dissipation for Single Operation PD 0.9 (Note 3) W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 40 °C/W 78 (Note 2) °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 135 (Note 3) °C/W Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3.Surface mounted on minimum copper pad, pulse width≤10s. N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - V VGS=0, ID=250μA VGS(th) 1.0 1.7 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0 - - 1 VDS=48V , VGS=0 IDSS - - 10 μA VDS=40V , VGS=0, Tj=55°C - 37 58 VGS=10V , ID=4.5A *RDS(ON) - 42 60 mΩ VGS=4.5V , ID=4A *GFS - 6 - S VDS=10V , ID=4.5A Dynamic Ciss - 1173 - Coss - 45 - Crss - 35 - pF VDS=25V , VGS=0, f=1MHz *td(ON) - 8 20 *tr - 12 18 *td(OFF) - 30 35 *tf - 7 15 ns VDS=30V , ID=1A, VGS=10V , RG=6Ω

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 3/12 MTC5806AQ8 CYStek Product Specification *Qg - 14 16 *Qgs - 3.9 - *Qgd - 4.7 - nC VDS=30V , ID=4.5A, VGS=10V Source-Drain Diode *VSD - 0.75 1.0 V VGS=0V , IS=1.3A *IS - - 1.3 A *ISM - - 2.6 A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -60 - - V VGS=0, ID=-250μA VGS(th) -1.0 -1.8 -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V , VDS=0 - - -1 VDS=-48V , VGS=0 IDSS - - -10 μA VDS=-40V , VGS=0, Tj=55°C - 70 90 VGS=-10V , ID=-3.5A *RDS(ON) - 93 125 mΩ VGS=-4.5V , ID=-3A *GFS - 5 - S VDS=-10V , ID=-3.5A Dynamic Ciss - 940 - Coss - 49 - Crss - 35 - pF VDS=-30V , VGS=0, f=1MHz *td(ON) - 6 13 ns *tr - 8 18 *td(OFF) - 26 31 *tf - 11 20 ns VDS=-30V , ID=-1A, VGS=-10V , RG=6Ω *Qg - 10 15 *Qgs - 3 - *Qgd - 3.1 - nC VDS=-30V , ID=-3.5A, VGS=-10V Source-Drain Diode *VSD - -0.75 -1.0 V VGS=0V , IS=-1.3A *IS - - -1.3 *ISM - - -2.6 A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTC5806AQ8 SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel 5806SS

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 4/12 MTC5806AQ8 CYStek Product Specification Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 012345 VDS, Drain-Source Voltage(V) ID, Drain Current(A) VGS=3V 10V, 9V, 8V, 7V, 6V, 5V, 4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=2.5V VGS=3V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=4.5A RDS(ON)@Tj=25°C : 36mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=4.5A

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 5/12 MTC5806AQ8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 1 6 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=4.5A VDS=48V VDS=30V VDS=12V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 1ms 100μsRDS(ON) Limite TA=25°C, Tj=150°C, VGS=10V RθJA=78°C/W,Single Pulse 100m Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 T J, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 6/12 MTC5806AQ8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Typical Transfer Characteristics 02468 1 0 1 2 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=78°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 7/12 MTC5806AQ8 CYStek Product Specification Typical Characteristics : Q2( P-channel) Typical Output Characteristics 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) VGS=-3V VGS=-4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5V VGS=-3V VGS=-10V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 -IS, Source Drain Current(A) -VSD, Source-Drain Voltage(V) 1 0 VGS=0V Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain-Source On-State Resistance VGS=-10V, ID=-3.5A RDS(ON)@Tj=25°C : 69mΩ typ. -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) ID=-3.5A

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 8/12 MTC5806AQ8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) -VGS(th), Threshold Voltage(V) ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-10V Pulsed TA=25°C Gate Charge Characteristics 02468 1 0 1 2 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-48V ID=-3.5A VDS=-30V VDS=-12V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -ID, Drain-Source Voltage(V) -ID, Drain Current(A) DC 10ms 100m 100μs TA=25°C, Tj=150°C, VGS=-10V θJA=78°C/W, Single Pulse 1ms RDS(ON) Limited Maximum Drain Current vs Junction Temperature 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A)TA=25°C, VGS=-10V RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 9/12 MTC5806AQ8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Typical Transfer Characteristics 02468 1 0 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) VDS=-10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=78°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 10/12 MTC5806AQ8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 11/12 MTC5806AQ8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.05.17 Page No. : 12/12 MTC5806AQ8 CYStek Product Specification SOP-8 Dimension 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: 5806SS □□□□ Date Code Device Name *: Typical c 0.170 0.250 0.006 0.010 θ 0° 8° 0° 8° D 4.700 5.100 0.185 0.200 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.