MTC4506Q8

MTC4506Q8 DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application. Features： N-Channel: VDS=60V,ID=4.5A,RDS(ON)<40mΩ@VGS=10V P-Channel: V DS=-60V,ID=-4.1A,RDS(ON)<90mΩ@VGS=-10V 1) High Power and current handing capability. 2) Lead free product is acquired. 3) Surface Mount Package. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 ±20 V ID Drain Current-Continuous @TA=25℃1 4.5 -4.1 A Drain Current-Continuous @TA=70℃1 3.5 -3.2 IDM Pulsed Drain Current-2 -14 EAS 29.7 mJ IAS 24.2 A PD Power Dissipation4 1.5 1.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 -55 to +150 Thermal Characteristics： Symbol Parameter N-Channel Max P-Channel Max Units RƟJA Thermal Resistance,Junction to Ambient1 ℃/W RƟJAC Thermal Resistance,Junction Case1 Single Pulse Avalanche Energy3 Avalanche Current MTC4506Q8 All d ata sheet.com

www.doingter.cn — 2 — N-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ON/Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=48V --- --- μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=4A --- mΩ VGS=4.5V,ID=3A --- GFS Forward Transconductance VDS=5V, ID=4A 28.3 S Rg 2.5 Ω Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 1027 --- pF Coss Output Capacitance --- --- Crss Reverse Transfer Capacitance --- --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=4A, RG=3.3Ω VGS=10V --- --- ns tr Rise Time --- --- ns td(off) Turn-Off Delay Time --- --- ns tf Fall Time --- --- ns Qg Total Gate Charge（4.5V） VGS=10V, VDS=48V, ID=4A --- --- nC Qgs Gate-Source Charge --- 2.6 --- nC Qgd Gate-Drain “Miller” Charge --- 4.1 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS --- 1.2 V Gate Resistance VDS=0V , VGS=0V, f=1MHz =1A , TJ=25℃ --- --- --- --- --- --- MTC4506Q8 All d ata sheet.com

,Force Current www.doingter.cn — 3 — IS 4.5 A ISM 18 trr 12.1 nS Qrr 6.7 nC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) Continuous Source Current1,5 Pulsed Source Current2,5 VG=VD=0V Reverse Recovery Time Reverse Recovery Charge IF=4A , dI/dt=100A/µs , TJ=25℃ 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=4A 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) IS -Source Current(A) TJ=150℃ TJ=25℃ Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics --- --- --- --- --- --- --- --- MTC4506Q8 All d ata sheet.com

www.doingter.cn — 4 — 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Capacitance(pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance MTC4506Q8

www.doingter.cn — 5 — P-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ON/Off States BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -60 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-48V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1.2 -2.5 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-3A --- 90 mΩ VGS=-4.5V,ID=-2A 115 GFS Forward Transconductance VDS=-5V, ID=-3A 8.7 S Rg 15 Ω Dynamic Characteristics Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 1080 --- pF Coss Output Capacitance --- 73 --- Crss Reverse Transfer Capacitance --- 50 --- Switching Characteristics td(on) Turn-On Delay Time VDD=-15V, GS=-10V, --- 8.8 --- ns Figure11. Normalized Maximum Transient Thermal Impedance Gate Resistance VDS= 0 V , VGS =0V, f=1MHz --- --- --- --- --- --- --- --- --- MTC4506Q8

, Force Current www.doingter.cn — 6 — tr Rise Time RGEN=3.3Ω,ID=-1A --- 19.6 --- ns td(off) Turn-Off Delay Time --- 47.2 --- ns tf Fall Time --- 9.6 --- ns Qg Total Gate Charge（-4.5V） VGS=-4.5V, VDS=-48V, ID=-3A --- 11.8 --- nC Qgs Gate-Source Charge --- 1.9 --- nC Qgd Gate-Drain “Miller” Charge --- 6.5 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-6.5A --- -1.2 V IS -4.1 A ISM -14 Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) Continuous Source Current1,5 Diode Forward Voltage2 VG=VD=0v, 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 0 0.5 1 1.5 2 -VDS , Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-3A Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0 7 14 21 QG , Total Gate Charge (nC) -VGS Gate to Source Voltage (V) VDS=-20V ID=-3A Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics --- --- --- --- --- MTC4506Q8

www.doingter.cn — —7 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance diode Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25 -VDS , Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 -VDS (V) -ID (A) Tc=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance MTC4506Q8 0086-0755-8278-9056