MTC3585G6

MTC3585G6 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free package Equivalent Circuit Outline MTC3585G6 TSOP-6 G：Gate S：Source D：Drain G1

CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 2/8 MTC3585G6 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BVDSS 20 -20 V Gate-Source V oltage VGS ±12 ±12 V Continuous Drain Current @TA=25 °C (Note 1) ID 3.5 -2.5 A Continuous Drain Current @TA=70 °C (Note 1) ID 2.8 -1.97 A Pulsed Drain Current (Note 2) IDM 10 -10 A Pd 1.14 W Total Power Dissipation (Note 1) Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 110 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 20 - - V VGS=0, ID=250μA ∆BVDSS/∆Tj - 0.02 - V/°C Reference to 25°C, ID=1mA VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±12V , VDS=0 IDSS - - 1 μA VDS=20V , VGS=0 IDSS - - 10 μA VDS=16V , VGS=0, Tj=70°C - - 75 ID=3.5A, VGS=4.5V *RDS(ON) - - 125 mΩ ID=1.2A, VGS=2.5V *GFS - 7 - S VDS=5V , ID=3A Dynamic Ciss - 230 370 Coss - 55 - Crss - 40 - pF VDS=20V , VGS=0, f=1MHz *td(ON) - 6 - *tr - 8 - *td(OFF) - 10 - *tf - 3 - ns VDS=15V , ID=1A, VGS=5V , RG=3.3Ω, RD=15Ω *Qg - 4 7 *Qgs - 0.7 - *Qgd - 2 - nC VDS=16V , ID=3A, VGS=4.5V Rg - 1.1 1.7 Ω f=1MHz Source-Drain Diode *VSD - - 1.2 V VGS=0V , IS=1.2A *trr - 16 - ns *Qrr - 8 - nC IS=3A, VGS=0V , dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 3/8 MTC3585G6 CYStek Product Specification P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V VGS=0, ID=-250μA ∆BVDSS/∆Tj - -0.01 - V/°C Reference to 25°C, ID=-1mA VGS(th) - - -1.2 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±12V , VDS=0 IDSS - - -1 μA VDS=-20V , VGS=0 IDSS - - -25 μA VDS=-16V , VGS=0, Tj=70°C - - 120 ID=-2.8A, VGS=-10V - - 160 ID=-2.5A, VGS=-4.5V *RDS(ON) - - 300 mΩ ID=-2A, VGS=-2.5V *GFS - 4 - S VDS=-5V , ID=-2A Dynamic Ciss - 270 430 Coss - 70 - Crss - 55 - pF VDS=-20V , VGS=0, f=1MHz *td(ON) - 6 - *tr - 17 - *td(OFF) - 16 - *tf - 5 - ns VDS=-10V , ID=-1A, VGS=-10V , RG=3.3Ω, RD=10Ω *Qg - 5 8 *Qgs - 1 - *Qgd - 2 - nC VDS=-16V , ID=-2A, VGS=-4.5V Source-Drain Diode *VSD - - -1.2 V VGS=0V , IS=-1.2A *trr - 20 - ns *Qrr - 15 - nC IS=-2A, VGS=0V , dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 4/8 MTC3585G6 CYStek Product Specification N-channel Characteristic Curves

CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 5/8 MTC3585G6 CYStek Product Specification N-channel Characteristic Curves(Cont.)

CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 6/8 MTC3585G6 CYStek Product Specification P-channel Characteristic Curves

CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 7/8 MTC3585G6 CYStek Product Specification P-channel Characteristic Curves(Cont.)

CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 8/8 MTC3585G6 CYStek Product Specification TSOP-6 Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Marking: Style: Pin 1. Gate1 (G1) Pin 2. Source2 (S2) Pin 3. Gate2 (G2) Pin 4. Drain2 (D2) Pin 5. Source1 (S1) Pin 6. Drain1 (D1) 3585 □□□□ Device Name Date Code 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 DIM Min. Max. Min. Max. D 0.0748 REF 1.90 REF J 0.0177 REF 0.45 REF d1 0.0374 REF 0.95 REF K 0.0236 REF 0.60 REF d2 0.0374 REF 0.95 REF L 0° 10° 0° 10° F 0.0276 0.0394 0.70 1.00 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : 42 Alloy ; pure tin plated
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.