MTC3504BJ4

MTC3504BJ4 CYSTEKEC | Alldatasheet

Document overview

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• PDF pages: 11

Technical content

Features

• Low Gate Charge N-CH P-CH BVDSS 40V -40V ID 12A -9A RDSON(MAX) 35mΩ 44mΩ
• Simple Drive Requirement
• RoHS compliant & Halogen-free package Equivalent Circuit Outline Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits MTC3504BJ4 TO-252-4L G：Gate D：Drain S：Source Parameter Symbol N-channel P-channel Unit Drain-Source V oltage VDS 40 -40 Gate-Source V oltage VGS ±20 ±20 V Continuous Drain Current @ TC=25°C ID 12 -9 Continuous Drain Current @ TC=100°C ID 8 -6 Pulsed Drain Current *1 IDM 48 -36 A Total Power Dissipation (TC=25℃) Pd 25

18 W Total Power Dissipation (TC=100℃)

Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1%

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 2/11 MTC3504BJ4 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 6 °C/W Thermal Resistance, Junction-to-ambient, max * 1 Rth,j-a 42 °C/W Note : *1 62.5°C/W when mounted on a 1 in pad of 2 oz copper. N-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 40 - - V VGS=0, ID=250μA VGS(th) 1.8 2.3 3.2 V VDS =VGS, ID=250μA GFS *1 - 19 - S VDS =5V , ID=10A IGSS - - ±100 nA VGS=±20, VDS=0 - - 1 μA VDS =32V , VGS =0 IDSS - - 25 μA VDS =30V , VGS =0, Tj=125°C ID(ON) *1 12 - - A VDS =5V , VGS =10V - 30 35 mΩ VGS =10V , ID=10A RDS(ON) *1 - 40 50 mΩ VGS =7V , ID=8A Dynamic Qg *1 - 9.1 - Qgs *1 - 2.3 - Qgd *1 - 3 - nC ID=15A, VDS=20V , VGS=10V td(ON) *1 - 2.5 - tr *1 - 7.5 - td(OFF) *1 - 12 - tf *1 - 4 - ns VDS=10V , ID=1A, VGS=10V , RG=6Ω Ciss - 796 - Coss - 84 - Crss - 59 - pF VGS=0V , VDS=20V , f=1MHz Source-Drain Diode IS *1 - - 12 ISM *2 - - 48 A VSD *1 - - 1.3 V IF=IS, VGS=0V Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature.

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 3/11 MTC3504BJ4 CYStek Product Specification P-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -40 - - V VGS=0, ID=-250μA VGS(th) -1.8 -2.3 -3.2 V VDS =VGS, ID=-250μA GFS *1 - 11 - S VDS =-5V , ID=-8A IGSS - - ±100 nA VGS=±20, VDS=0 - - -1 μA VDS =-32V , VGS =0 IDSS - - -25 μA VDS =-30V , VGS =0, Tj=125°C ID(ON) *1 -9 - - A VDS =-5V , VGS =-10V - 38 44 mΩ VGS =-10V , ID=-8A RDS(ON) *1 - 50 70 mΩ VGS =-7V , ID=-6A Dynamic Qg *1 - 11.5 - Qgs *1 - 2.5 - Qgd *1 - 3.2 - nC ID=-10A, VDS=-20V , VGS=-10V td(ON) *1 - 7 - tr *1 - 10 - td(OFF) *1 - 20 - tf *1 - 12 - ns VDS=-10V , ID=-1A, VGS=-10V , RG=6Ω Ciss - 1223 - Coss - 405 - Crss - 366 - pF VGS=0V , VDS=-20V , f=1MHz Source-Drain Diode IS *1 - - -9 ISM *2 - - -36 A VSD *1 - - -1.3 V IF=IS, VGS=0V Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature.

Ordering Information

Device Package Shipping Marking MTC3504BJ4 TO-252 (RoHS compliant & Halogen-free package) 2500 pcs / Tape & Reel 3504

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 4/11 MTC3504BJ4 CYStek Product Specification Characteristic Curves N-Channel On-R esistance Variation with Temperature R - Normalized Drain-S ource On-R esistance DS(on) T - J unction Temperature (°C ) 0.4 -50 0.7 1.0 J -25 25 DI = 10A V = 10V 1.3 1.6 1.9 GS 12550 75 100 150 T = 125° C V - Gate-to-S ource Voltage(V) 0.01 DS(ON) 0.02 0.04 0.03 GS 4 6 T = 25° CA A 0.08 0.06 0.05 0.07 0.09 81 0 I = 10 AD R - On-Resistance(Ω) On-R esistance Variation with Gate-to-S ource Voltage T = -55° C V - Gat e-t o-Source Volt age(V) I - Drain C urrent(A) D GS V = 10V DS A 43 5 25° C 125° C Transfer Charact eristics Body Diode Forward Voltage Variation with S ource C urrent and Temperature 25° C T = 125° C V - Body Diode Forward Voltage(V) Is - R everse Drain C urrent(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.0 0.8 1.2 -55° C 1.4 V - Drain Source Volt age(V) I - Drain C urrent(A) D 10 DS 1 2 8.0V V = 10V 7.0V GS 5.0V 3 4 3.5V 4.0V 6.0V On-Region Charact erist ics R -Normalized Drain-S ource On-R esistance DS(ON) On-Resist ance Variat ion wit h Drain Current and Gat e Volt age 1.6 0.8 1.2 1.0 1.4 10 20 2.2 1.8 2.0 2.4 30 40 8.0 V 10 V I - Drain C urrent(A)D GSV = 3.5 V 5.0 V 6.0 V 7.0 V

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 5/11 MTC3504BJ4 CYStek Product Specification Characteristic Curves(Cont.) Q - Gate C harge(nC) V - Gat e Source Volt age(V)GS g 4 8 I = 10A D 12 16 20VV = 15VDS Gat e Charge Charact eristics V - Drain-S ource Voltage( V ) Cap aci t an ce( p F ) 600 300 DS Cr ss Co ss 900 1200 Ci ss 20 30 40 GS f = 1MH z V = 0 V C apacitance C haracteristics DC V - Drain-S ource Voltage(V) Maximum S afe Operating Area I - Drain C urrent(A) V = 10V Si n gl e Pu l se R = 6°C/ W T = 25°C D DS θJC C GS R Limit DS(ON) 10s 100μs 10ms 100ms 1ms 40 50 P(pk),Peak Tr ansi ent Pow er (W) Si n gl e Pu l se R = 6°C/ W T = 25°CC θJC t ,Time (sec) 0.001 0.01 0.1 100101 1000 S ingle P ulse Maximum P ower Dissipation t ,Time (sec) Transient Thermal R esponse C urve r(t),Normalized Effective Transient Thermal Resist ance 0.001 0.01 0.02 Si n gl e Pu l se 0.01 Duty C ycle = 0.5 0.10.1 0.05 0.2 P θJC4.R (t)=r(t) * R 3.T - T = P * R (t ) θJC2.R =6°C / W 1.Duty C ycle,D = DM 1 10 J 1000100 θJC θJCC Not es:

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 6/11 MTC3504BJ4 CYStek Product Specification Characteristic Curves(Cont.) P-Channel On-R esistance Variation with Drain C urrent and Gate Voltage - I - Drain C urrent(A) R -Normalized Drain-S ource On-R esistance 1.5 0.5 DS(ON) D 30 40 50 2.5 V = - 3.5 VGS - 5.0 V - 6.0 V - 7.0 V - 10.0 V - 8.0 V - 5.0V -V - Drain-to-S ource Voltage(V) -I - Drain C urrent(A) D 10 - 6.0V V = - 10.0V - 7.0V GS DS 12 3 4 5 - 3.5V - 4.0V - 8.0V On-Region Charact erist ics On-Resistance Variation with Temperature T - Junction Temperature (°C ) R - Normalized Drain-S ource On-R esistance -50 0.4 DS(on) 0.7 1.0 J -25 DI = -9 A V = - 10V 1.3 1.6 1.9 GS 0 25 12550 75 100 150 On-R esistance Variation with Gate-to-S ource Voltage T = 125°C T = 25°C - V - G ate-to-S ource Voltage(V) GS A 8 10 R - On-Resistance(Ω)DS(ON) 0.05 0.1 0.15 0.2 A I = - 4.5AD AT = -55°C -V - G ate-S ource Voltage( V ) 1.5 D GS 2.5 V = - 10V DS 3.5 4.5 5.5 25°C 125°C Transfer Charact erist ics -I - Drain C urrent( A ) Bo w dy Diode Forward Volt age Variat ion ith S ourc e C urre nt a nd T em pe ra ture 25°C -V - Body Diode Forward Voltage(V) -Is - R everse Drain C urrent(A) 0.001 0.01 0.1 V = 0V 100 GS 0.4 S D 2 0.6 AT = 125°C 1.00.8 1.2 -55°C 1.4

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 7/11 Characteristic Curves(Cont.) MTC3504BJ4 CYStek Product Specification Effective Transient Thermal Impedance 0.05 Si n gl e Pu l se 0.00001 0.1 0.01 0.02 0.0010.0001 Duty Cycle = 0.5 0.2 0.1 Not es: 4.R (t)=r(t) * R 3.T - T = P * R (t) 2.R = 6°C / W 1.Dut y Cycl e,D = 0.01 0.1 θJC J θJC PDM θJC C θJC t , Pulse Width(ms)

0.01 Normalized Thermal R esponse(R )thjc

V = - 15V Q - G ate C harge(nC ) - V - Gate-to-S ource Voltage(V)GS g DI = - 9A 81 2 16 - 20V DS Gat e Charge Charact erist ics - V , Drain-S ource Voltage(V) C apacitance(pF) 300 600 DS Cr ss Co ss 900 1200 1500 Ci ss 20 30 40 GS f = 1 MH z V = 0 V C apacitance C haracteristics DC -V - Drain-S ource Voltage(V) Maximum S afe Operating Area -I - Drain C urrent(A) V = -10V S ingle P ulse R = 6°C / W T = 25°C D DS θJC C GS R Limit DS(ON) 10s 100μs 10ms 100ms 1ms 40 50 t ,Time (sec) P(pk), Peak Tr ansi ent Pow er (W) 0.001 0.10.01 101 100 S ingle P ulse R = 6°C / W T = 25°CC θJC S ingle Pulse Maximum Power Dissipation

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 8/11 MTC3504BJ4 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 9/11 MTC3504BJ4 CYStek Product Specification Recommended soldering footprint Unit : mm

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 10/11 MTC3504BJ4 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 11/11 MTC3504BJ4 CYStek Product Specification TO-252 Dimension Inches Millimeters Inches Marking: Style: Pin 1.Soure 1 2.Gate 1 3.&Tab Drain 1& Drain 2 4. Source 2 5. Gate 2 4-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J4 3504 □□□□ Device Name Date code Tab D3 0.0866 0.1181 2.20 3.00 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead : KFC; Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.