MTC2804Q8

MTC2804Q8 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• RoHS compliant package Equivalent Circuit Outline MTC2804Q8 S：Source D：Drain G：Gate SOP-8

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 2/9 MTC2804Q8 CYStek Product Specification Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BVDSS 40 -40 V Gate-Source V oltage VGS ±20 ±20 V Continuous Drain Current @TC=25 °C (Note 1) ID 7 -6 A Continuous Drain Current @TC=100 °C (Note 1) ID 6 -5 A Pulsed Drain Current (Note 2) IDM 28 -24 A Pd 2.4 W Total Power Dissipation @TA=25°C (Note 1) Linear Derating Factor 0.016 W / °C Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 62.5 °C/W Thermal Resistance, Junction-to-Case Rth,jc 25 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 40 - - V VGS=0, ID=250μA VGS(th) 1.0 1.5 3.0 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0 - - 1 μA VDS=32V , VGS=0 IDSS - - 25 μA VDS=30V , VGS=0, Tj=125°C - 25 28 ID=7A, VGS=10V *RDS(ON) - 30 36 mΩ ID=6A, VGS=7V *GFS - 19 - S VDS=5V , ID=7A Dynamic Ciss - 916 - Coss - 79 - Crss - 56 - pF VDS=20V , VGS=0, f=1MHz *td(ON) - 2.3 - *tr - 7.2 - *td(OFF) - 11 - *tf - 6 - ns VDS=10V , ID=1A, VGS=10V , RG=6Ω *Qg - 9.1 - *Qgs - 2.3 - *Qgd - 3 - nC VDS=20V , ID=7A, VGS=10V Source-Drain Diode *VSD - - 1.3 V VGS=0V , IS=7A *IS - - 7 A *ISM - - 20 A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 3/9 MTC2804Q8 CYStek Product Specification P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -40 - - V VGS=0, ID=-250μA VGS(th) -1.0 -1.5 -3.0 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V , VDS=0 - - -1 μA VDS=-32V , VGS=0 IDSS - - -25 μA VDS=-30V , VGS=0, Tj=125°C - 38 44 ID=-6A, VGS=-10V *RDS(ON) - 46 55 mΩ ID=-5A, VGS=-7V *GFS - 11 - S VDS=-5V , ID=-6A Dynamic Ciss - 1039 - Coss - 327 - Crss - 301 - pF VDS=-20V , VGS=0, f=1MHz *td(ON) - 6.5 - *tr - 9.5 - *td(OFF) - 18 - *tf - 10 - ns VDS=-10V , ID=-1A, VGS=-10V , RG=6Ω *Qg - 9 - *Qgs - 1.5 - *Qgd - 2.9 - nC VDS=-20V , ID=-6A, VGS=-10V Source-Drain Diode *VSD - - -1.3 V VGS=0V , IS=-6A *IS - - -6 *ISM - - -20 A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 4/9 MTC2804Q8 CYStek Product Specification N-channel Characteristic Curves On-R esistance Variation with Temperature R - Normalized Drain-S ource On-R esistance DS (on) T - Junct i on Temper at ur e (°C) 0.4 -50 0.7 1.0 J -25 25 DI = 7A V = 10V 1.3 1.6 1.9 GS 12550 75 100 150 On-R esistance Variation with Gate-to-S ource Voltage T = 125°C V - Gat e-Source Volt age(V) 0.01 DS(ON) 0.02 0.04 0.03 GS T = 25°CA A 0.08 0.06 0.05 0.07 0.09 81 0 I = 3.5 AD R - On-Resistance(Ω) R -Normalized Drain-S ource On-R esistance DS(ON) O n-R es is ta nc e V a riation with D ra in C urrent a nd G a te V olta g e 1.6 0.8 1.2 1.0 1.4 5 10 2.2 1.8 2.0 2.4 15 20 7.0 V 8.0 V 10 V I - Drain C urrent(A)D GSV = 6.0 V V - Drain-Source Volt age(V) I - Drain C urrent(A) D 5 DS 8.0V V = 10V 7.0V GS 345 On-Region Charact erist ics 6.0V T = -55°C V - Gat e-t o-Source Volt age(V) I - Drain C urrent(A) D GS V = 10V DS A 65 7 25°C 125°C Transfer Characterist ics Body Diode Forward Voltage Variation wit h S ource C urrent and Temperature 25°C T = 125°C V - Body Diode Forward Voltage(V) Is - R everse Drain C urrent(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.0 0.8 1.2 -55°C 1.4

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 5/9 MTC2804Q8 CYStek Product Specification N-channel Characteristic Curves(Cont.) Q - Gat e Charge(nC) V - Gat e Source Volt age(V)GS g 4 8 I = 7A D 12 16 20VV = 15VDS Gate Charge Characteristics V - Drain-S ource Voltage( V ) C apacitance( pF ) 600 300 DS Cr ss Co ss 900 1200 Ci ss 20 30 40 GS f = 1MH z V = 0 V Cap aci t an ce Ch ar act er i st i cs DC V - Drain-Source Volt age( V ) Maximum S afe Operating Area I - Drain C urrent( A ) V = 10V S ingle P ulse R = 125°C / W T = 25°C 0.1 0.01 D 0.1 DS θJA A GS R Limit 100 DS(ON) 10s 10 100 100μs 10ms 100ms 1ms P( pk ),Peak Tr ansi ent Pow er ( W ) S ingle P ulse R = 125°C / W T = 25°CA θJA t ,T ime ( s ec ) 0.001 0.01 0.1 100101 1000 S ingle Pulse Maximum Power Dissipation t ,Time (sec) Transient Thermal Response Curve r( t z Transient Thermal Resist ance 0.001 0.01 0.02 S ingle P ulse 0.01 Duty Cycle = 0.5 0.1 0.1 0.05 0.2 ),Normali ed Effective P θJA4.R (t)=r(t) + R 3.T - T = P * R (t) θJA2.R =125°C / W 1.Duty C ycle,D = DM 11 0 J 1000100 θJA θJAA Notes:

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 6/9 MTC2804Q8 CYStek Product Specification P-channel Characteristic Curves On-Resist ance Variat ion wit h Drain Current and Gat e Volt age On-R esistance Variation with Temperature T - Junct i on Temper at ur e (°C) R - Normalized Drain-S ource On-R esistance -50 0.4 DS (on) 0.7 1.0 J -25 25 DI = -6 A V = - 10V 1.3 1.6 1.9 GS 12550 75 100 150 On-Resist ance Variat ion wit h Gat e-t o-Source Volt age T = 25°C T = 125°C - V - G ate-to-S ource Voltage(V) R - On-R esistance(Ω) DS(ON) 0.05 GS A 0.1 0.15 0.2 A I = - 3AD AT = -55°C -V - G ate-S ource Voltage( V ) D GS V = - 10V DS 4 5 6 25°C 125°C Transfer Charact erist ics -I - Drain C urrent( A ) Body Diode Forward Voltage Variation with S ource C urrent and Temperature 25°C -V - Body Diode Forward Voltage(V) -Is - R everse Drain C urrent(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 GS AT = 125°C 1.00.8 1.2 -55°C 1.4 -V - Drain-to-S ource Voltage(V) -I - Drain C urrent(A) D 5 DS 1 2 - 6.0V V = - 10.0V - 7.0V GS 3 45 On-Region Charact erist ics - 8.0V - I - Drain C urrent(A) R -Normalized Drain-S ource On-R esistance 1.5 0.5 DS(ON) D GSV = - 6.0 V - 7.0 V 15 20 - 8.0 V - 10.0 V 2.5

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 7/9 MTC2804Q8 CYStek Product Specification P-channel Characteristic Curves(Cont.) V = - 15V Q - Gate C harge(nC ) - V - Gate-to-S ource Voltage(V)GS g DI = - 6A 69 12 - 20V DS Gat e Ch ar ge Ch ar act er i st i cs - V , Drain-S ource Voltage(V) C apacitance(pF) 300 600 DS Cr ss Co ss 900 1200 1500 Ci ss 20 30 40 GS f = 1 MH z V = 0 V C apacitance C haracteristics DC -V - Drain-S ource Voltage( V ) Maximum Safe Operat ing Area -I - Drain C urrent( A ) V = 10V S ingle P ulse R = 125°C/ W T = 25°C 0.1 0.01 D 0.1 DS θJA A GS R Limit 100 DS(ON) 10s 10 100 100μs 10ms 100ms 1ms P( pk ),Peak Tr ansi ent Pow er ( W ) S ingle P ulse R = 125°C / W T = 25°CA θJA t ,T ime ( s ec ) 0.001 0.01 0.1 1001011 000 S ingle Pulse Maximum Power Dissipation t ,Time (sec) Transient Thermal Response Curve r( t ),Normalized Effective Transient Thermal Resist ance 0.001 0.01 0.02 S ingle P ulse 0.01 Duty Cycle = 0.5 0.1 0.1 0.05 0.2 P θJA4.R (t)=r(t) + R 3.T - T = P * R (t) θJA2.R =125°C / W 1.Duty C ycle,D = DM 11 0 J 1000100 θJA θJAA Notes:

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 8/9 MTC2804Q8 CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 9/9 MTC2804Q8 CYStek Product Specification SOP-8 Dimension *: Typical 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A Date Code Device Name 2804SS □□□□ H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: KFC ; pure tin plated plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.