MTC1016C6 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Features
- Low on-resistance
- ESD protected gate
- High speed switching
- Low-voltage drive
- Pb-free lead plating and halogen-free package Equivalent Circuit Outline
Ordering Information
(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel SOT-563 MTC1016C6 Tr1 Tr2 N-CH P-CH BVDSS 20V -20V ID @VGS=(-)4.5V , TA=25°C 0.57A -0.4A RDSON(typ.) @VGS=(-)4.5V 0.30Ω 0.61Ω RDSON(typ.) @VGS=(-)2.5V 0.43Ω 1.06Ω RDSON(typ.) @VGS=(-)1.8V 0.63Ω 1.41Ω Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name D1 G2 S2 S1 G1 D2
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 2/ 12 MTC1016C6 CYStek Product Specification The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (TA=25C, unless otherwise noted) Parameter Symbol Limits Unit N-channel P-channel Drain-Source Breakdown V oltage BVDSS 20 -20 V Gate-Source V oltage VGS ±8 ±8 Continuous Drain Current @TA=25 C, VGS=4.5V(-4.5V) ID 0.57 -0.40 A Continuous Drain Current @TA=70 C, VGS=4.5V(-4.5V) 0.46 -0.32 Pulsed Drain Current (Note 1) IDM 3.4 -1.7 Power Dissipation @TA=25°C PD 0.15 W Power Dissipation @TA=70°C 0.1 Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3.Surface mounted on minimum pad of FR-4 board, t≤5s. Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note) Rth,ja 833 C/W Note : Surface mounted on minimum pad of FR-4 board, t≤5s. N-Channel Electrical Characteristics (Tj=25C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 20 - - V VGS=0V , ID=250μA VGS(th) 0.5 - 1.2 VDS=VGS, ID=250μA IGSS - - ±5 μA VGS=±8V, VDS=0V IDSS - - 1 VDS=20V , VGS=0V - - 10 VDS=16V , VGS=0V (Tj=70C) *RDS(ON) - 0.30 0.40 VGS=4.5V , ID=600mA - 0.43 0.65 VGS=2.5V , ID=400mA - 0.63 1.07 VGS=1.8V , ID=350mA *GFS - 1.1 - S VDS=10V, ID=400mA Dynamic Ciss - 58.5 - pF VDS=16V , VGS=0V , f=1MHz Coss - 12.3 - Crss - 7.8 - td(ON) - 6 - ns VDS=10V , ID=250mA, VGS=4.5V , RG=10Ω tr - 6 - td(OFF) - 26 - tf - 20 -
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 3/ 12 MTC1016C6 CYStek Product Specification Qg - 0.79 - nC VDS=10V , ID=250mA, VGS=4.5V Qgs - 0.09 - Qgd - 0.27 - Source-Drain Diode *IS - - 0.57 A *ISM - - 2.3 *VSD - 0.75 1.0 V VGS=0V , IS=150mA *Pulse Test : Pulse Width 300μs, Duty Cycle2% P-Channel Electrical Characteristics (Tj=25C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V VGS=0V , ID=-250μA VGS(th) -0.5 - -1.2 VDS=VGS, ID=-250μA IGSS - - ±5 μA VGS=±8V, VDS=0V IDSS - - -1 VDS=-20V , VGS=0V - - -10 VDS=-16V , VGS=0V (Tj=70C) *RDS(ON) - 0.61 0.83 VGS=-4.5V , ID=-430mA - 0.65 0.96 VGS=-4V , ID=-300mA - 1.41 2.40 VGS=-1.8V , ID=-10mA *GFS - 0.7 - S VDS=-10V, ID=-250mA Dynamic Ciss - 54.7 - pF VDS=-16V , VGS=0V , f=1MHz Coss - 16.6 - Crss - 11.9 - td(ON) - 6 - ns VDS=-10V , ID=-250mA, VGS=-4.5V , RG=10Ω tr - 10 - td(OFF) - 23 - tf - 28 - Qg - 1.13 - nC VDS=-10V , ID=-250mA, VGS=-4.5V Qgs - 0.09 - Qgd - 0.42 - Source-Drain Diode *IS - - -0.4 A *ISM - - -1.7 *VSD - -0.78 -1.2 V VGS=0V , IS=-150mA
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 4/ 12 MTC1016C6 CYStek Product Specification N-Channel Typical Characteristics Typical Output Characteristics 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current (A) VGS=1.5V 5V, 4.5V,4V,3.5V,3V,2.5V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.2 0.4 0.6 0.8 1.2 0.01 0.1 1 10 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=1.8V VGS=2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 5 6 7 8 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(Ω) ID=600mA Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=4.5V, ID=600mA RDS(ON)@Tj=25°C : 0.31Ω typ.
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 5/ 12 MTC1016C6 CYStek Product Specification N-Channel Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0 2 4 6 8 10 12 14 16 18 20 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=833°C/W Gate Charge Characteristics 0 0.2 0.4 0.6 0.8 1 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=10V ID=250mA Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=4.5V, RθJA=833°C/W Single Pulse RDS(ON) Limited Maximum Drain Current vs JunctionTemperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=4.5V, RθJA=833°C/W
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 6/ 12 MTC1016C6 CYStek Product Specification N-Channel Typical Characteristics(Cont.) Typical Transfer Characteristics 0.4 0.8 1.2 1.6 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=5V 25°C Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=833°C/W
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 7/ 12 MTC1016C6 CYStek Product Specification P-Channel Typical Characteristics Typical Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) 2.5V -VGS=1.5V 5V,4.5V,4V,3.5V,3V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.4 0.8 1.2 1.6 2.4 2.8 3.2 3.6 0.01 0.1 1 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=4.5V -VGS=2.5V -VGS=1.8V -VGS=4V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0.5 1.5 2.5 0 1 2 3 4 5 6 7 8 -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-430mA Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-430mA RDS(ON)@Tj=25°C : 0.62Ω typ.
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 8/ 12 MTC1016C6 CYStek Product Specification P-Channel Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0 2 4 6 8 10 12 14 16 18 20 -VDS, Drain-Source Voltage(V) Capacitance(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=833°C/W Gate Charge Characteristics Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-10V ID=-250mA Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=833°C/W Single Pulse RDS(ON) Limited Maximum Drain Current vs JunctionTemperature 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A)TA=25°C, VGS=-4.5V, RθJA=833°C/W
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 9/ 12 MTC1016C6 CYStek Product Specification P-Channel Typical Characteristics(Cont.) Typical Transfer Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 1 2 3 4 5 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) VDS=-5V Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=-10V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=833°C/W
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 10/ 12 MTC1016C6 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 11/ 12 MTC1016C6 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 12/ 12 MTC1016C6 CYStek Product Specification SOT-563 Dimension DIM Inches Millimeters DIM Inches Millimeters D 0.059 0.067 1.500 1.700 θ 7° REF 7° REF Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : Lead : Pure tin plated. Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 6-Lead SOT-563 Plastic Surface Mounted Package CYStek Package Code: C6 Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Marking: Product Code Date Code: Year+Month Year: 7→2017, 8→2018