MTB090N06N3 CYSTEKEC | Alldatasheet

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Technical content

Features

  • Simple drive requirement
  • Small package outline
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTB090N06N3 SOT-23 D S G：Gate S：Source D：Drain G Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 2/9 MTB090N06N3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 60 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) 3.9 Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) ID 3.1 Pulsed Drain Current (Notes 1, 2) IDM 16 A Maximum Power Dissipation@ TA=25℃ (Note 3) PD 1.25 Maximum Power Dissipation@ TA=70℃ (Note 3) 0.8 W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient, max RθJA 100 °C/W Thermal Resistance, Junction-to-Case, max RθJC 70 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - V VGS=0V , ID=250μA VGS(th) 1.0 1.5 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS=48V , VGS=0V IDSS - - 10 μA VDS=48V , VGS=0V (Tj=85°C) - 77 100 ID=3A, VGS=10V *RDS(ON) - 86 115 mΩ ID=2A, VGS=4.5V *GFS - 2.3 - S VDS=15V , ID=1A Dynamic Ciss - 504 - Coss - 20 - Crss - 18 - pF VDS=30V , VGS=0, f=1MHz td(ON) - 5 - tr - 3 - td(OFF) - 23 - tf - 10 - ns VDS=30V , ID=1A, VGS=10V , RG=1Ω

CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 3/9 MTB090N06N3 CYStek Product Specification Qg - 6 - Qgs - 1.7 - Qgd - 1.6 - nC VDS=30V , ID=3.9A, VGS=10V Source-Drain Diode *IS - - 3.9 *ISM - - 16 A *VSD - 0.8 1.2 V VGS=0V , IF=2.3A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 4/9 MTB090N06N3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 V DS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V,8V,7V,6V,5V,4V VGS=3V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS = 3V 4.5V 10V VGS=2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 240 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=3A RDSON@Tj=25°C : 77mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=3A

CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 5/9 MTB090N06N3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=15V Pulsed Ta=25°C Gate Charge Characteristics 02468 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=3.9A VDS=48V VDS=30V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limit TA=25°C, Tj=150°, VGS=10V RθJA=100°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V, RθJA=100°C/W

CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 6/9 MTB090N06N3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 01234 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=100°C/W VDS=10V VGS, Gate-Source Voltage(V) ID, Drain Current (A) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=100°C/W

CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 7/9 MTB090N06N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 8/9 MTB090N06N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C420N3 Issued Date : 2014.01.24 Revised Date : Page No. : 9/9 MTB090N06N3 CYStek Product Specification SOT-23 Dimension *: Typical Inches Marking: Date Code TE BHNS XX Device Code Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.