MTB090N06I3 DOINGTER | Alldatasheet

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www.doingter .cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=11A,RDS(ON) <75mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON) . 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -TC=25℃ 11 A Continuous Drain Current -TC=100℃ 7 Pulsed Drain Current 1 44 EAS Single Pulse Avalanche Energy 25 mJ PD Power Dissipation ,TC=25℃ 25 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 5 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 DG D S MTB090N06I3 All d ata sheet.com

www.doingter .cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.8 2.5 V RDS(ON) Drain -Source On Resistance3 VGS=10V,ID=6A --- 60 75 mΩ VGS=4.5V,ID=3A --- 70 90 GFS Forward Transconductance VDS=10V, ID=3A --- 4 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 500 725 pF Coss Output Capacitance --- 45 65 Crss Reverse Transfer Capacitance --- 16 30 Switching Characteristics td(on) Turn-On Delay Time 3 VDD=30V, ID=1A, VGS=10V,RGEN=3.3Ω --- 2.9 --- ns tr Ris e Time2,3 --- 9.5 --- ns td(off) Turn-Off Delay Time --- 18.4 --- ns tf Fall Time 2,3 --- 5.3 --- ns Qg Total Gate Charge3 VGS=10V, VDS=48V, ID=6A --- 9.3 13 nC Qgs Gate -Source Charge --- 2.1 3 nC Qgd Gate -Drain “Miller” Charge --- 1.8 4 nC Drain-Source Diode Characteristics VSD Source -Drain Diode Forward Voltage3 VGS=0V,IS=1A --- --- 1 V MTB090N06I3 All d ata sheet.com

www.doingter .cn — 3 — Is Continuous Source Current Vg=Vd=0V --- --- 11 A Ism Puls ed Source Current --- --- 44 A Qrr Reverse Recovery Charge --- 14.3 --- NS Trr Reverse Recovery Time --- 23.2 --- NC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) GS=30V,IS=1A , dI/dt=100A/µs 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=1mH,IAS=7A.,RG=25,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. ID , Continuous Drain Current (A) TJ , Junction Temperature (℃) Fig.1 Continuous Drain Current vs. TC TC , Case Temperature (℃) Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage(V) Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) MTB090N06I3 All d ata sheet.com

www.doingter .cn — 4 — VDS , Drain to Source V oltage (V) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Drain Current (A) Fig.6 Maximum Safe Operation Area Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.7 Switching Time Waveform Fig.8 EAS Waveform MTB090N06I3 0086-0755-8278-9056 All d ata sheet.com