MTB020N03V8 DOINGTER | Alldatasheet
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www.doingter .cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features： 1) VDS=30V,ID=25A,RDS(ON) =18mΩ@VGS=10V 2) Improved dv/dt capability 3) Fast switching 4) 100% EAS Guaranteed 5) Green Device Available. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -Continuous (TC=25 ℃) A Continuous Drain Current -TC=100℃ IDM Drain Current – Pulsed 1 100 A EAS Single Pulse Avalanche Energy 2 mJ PD Power Dissipation (TC=25 ℃) W Power Dissipation – Derate above 25 ℃ 0.17 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 Thermal Characteristics： Symbol Parameter Max Units S S G DDDD RƟJC Thermal Resistance,Junction to Case 6 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 MTB020N03V8 All d ata sheet.com
www.doingter .cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA --- --- V IDSS Drain -Source Leakage Current VGS=0V, VDS=30V, TJ=25℃ --- --- μA VGS=0V, VDS=24V, TJ=125℃ μA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.6 2.5 V RDS(ON) Drain -Source On Resistance3 VGS=10V,ID=12A --- mΩ VGS=4.5V,ID=8A --- GFS Forward Transconductance VDS=10V, ID=6A --- 6.5 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 345 500 pF Coss Output Capacitance --- Crss Reverse Transfer Capacitance --- Switching Characteristics td(on) Turn-On Delay Time 3.4 VDD=15V , VGS=10V , RG=6,ID=1A --- 2.8 ns tr Ris e Time3.4 --- 7.2 ns td(off) Turn-Off Delay Time3.4 --- 15.8 ns tf Fall Time 3.4 --- 4.6 ns Qg Total Gate Charge 3.4 --- 4.1 nC MTB020N03V8 All d ata sheet.com
A A www.doingter .cn — 3 — Qgs Gate -Source Charge3.4 VDS=15V , VGS=4.5V , ID=6A --- 1 2 nC Qgd Gate -Drain “Miller” Charge3.4 --- 2.1 4 nC Drain-Source Diode Characteristics VSD Source -Drain Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- 0.7 1 V Ls --- 25 lsmr --- 50 Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) Continuous Source Current Pulsed Source Current VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V DD=25V,VGS=10V,L=1mH,IAS=8A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2 % . 4. Essentially independent of operating temperature. Fig.1 Continuous Drain Current vs. T C Fig.3 Normalized V th vs. TJ ID , Continuous Drain Current (A) Normalized On Resistance (m) Fig.2 Normalized RDSON vs. T J Normalized Gate Threshold V oltage (V) VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) MTB020N03V8 All d ata sheet.com
www.doingter .cn — 4 — Normalized Thermal Response (RθJC) ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Fig.8 EAS Waveform Fig.7 Switching Time Waveform MTB020N03V8 0086-0755-8278-9056 All d ata sheet.com