MTA5D0P01H8

MTA5D0P01H8 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 1/ 10 MTA5D0P01H8 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTA5D0P01H8 BVDSS -12V ID@VGS=-4.5V , TC=25°C(Silicon limit) -74A ID@VGS=-4.5V , TC=25°C(package limit) -58A ID@VGS=-4.5V , TA=25°C -23.4A 4.0mΩ VGS=-4.5V , ID=-20A Features RDSON(TYP)

• Single Drive Requirement 5.4mΩ VGS=-2.5V , ID=-15A
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package Symbol Outline MTA5D0P01H8 DFN5×6 Pin 1 D

Ordering Information

MTA5D0P01H8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel G：Gate D：Drain S：Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name S S S G D D D D D D D S S G S Pin 1

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 2/ 10 MTA5D0P01H8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol 10s Steady State Unit Drain-Source V oltage VDS -12 Gate-Source V oltage VGS ±8 V Continuous Drain Current @ TC=25°C, VGS=-4.5V (silicon limit) (Note1) -74 Continuous Drain Current @ TC=25°C, VGS=-4.5V (package limit) (Note1) -58 Continuous Drain Current @ TC=100°C, VGS=-4.5V (Note1) ID -46.8 Continuous Drain Current @ TA=25°C, VGS=-4.5V (Note2) -23.4 -16.5 Continuous Drain Current @ TA=70°C, VGS=-4.5V (Note2) IDSM -18.7 -13.2 Pulsed Drain Current (Note3) IDM -296 Avalanche Current @ L=0.1mH IAS -42 A Avalanche Energy @ L=1mH, ID=-26A, VDD=-10V EAS 338 mJ TC=25℃ (Note1) 50 TC=100℃ (Note1) PD 20 TA=25°C (Note2) 5.0 2.5 Total Power Dissipation TA=70°C (Note2) PDSM 3.2 1.6 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Typical Maximum Unit Thermal Resistance, Junction-to-case Rth,j-c 2 2.5 °C/W t≤10s 18 25 Thermal Resistance, Junction-to-ambient (Note2) Steady State Rth,j-a 45 50 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -12 - - VGS=0V , ID=-250μA VGS(th) -0.4 - -1.0 V VDS = VGS, ID=-250μA GFS *1 - 64 - S VDS =-5V , ID=-20A IGSS - - ±100 nA VGS=±8V , VDS=0V - - -1 VDS =-10V , VGS =0V IDSS - - -25 μA VDS =-10V , VGS =0, Tj=85°C

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 3/ 10 MTA5D0P01H8 CYStek Product Specification Dynamic *4 Ciss - 6078 - Coss - 1246 - Crss - 724 - pF VDS=-10V , VGS=0V , f=1MHz Qg *1, 2 - 62.1 93.1 Qgs *1, 2 - 9.6 - Qgd *1, 2 - 20.5 - nC VDS=-10V , VGS=-4.5V , ID=-20A tr *1, 2 - 85.2 127.8 tf *1, 2 - 311 466.5 ns VDS=-10V , ID=-20A, VGS=-4.5V , RG=1Ω Rg - 12 - Ω f=1MHz Source-Drain Diode VSD *1 - -0.82 -1.2 V IS=-20A, VGS=0V trr - 142 - ns Qrr - 123 - nC IF=-20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. *4.Guaranteed by design, not subject to production testing. Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 4/ 10 MTA5D0P01H8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 120 160 200 01234 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) 10V,9V,8V,7V,6V,5V,4V,3.5V -VGS=3V -VGS=2V -VGS=1.5V Static Drain-Source On-State resistance vs Drain Current 0.01 0.1 1 10 100 D, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) In descending order VGS=-2.5V -4.5V -10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 5 10 15 20 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-20A Drain-Source On-State Resistance vs Junction Tempearture 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-20A RDS(ON)@Tj=25°C : 4mΩ typ

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 5/ 10 MTA5D0P01H8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 02468 1 0 Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Ciss -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Crss f=1MHz Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) RDS( ON) Limited DC 10ms 100ms 1ms 100μs TC=25°C, Tj=150°C, VGS=-4.5V, RθJC=2.5°C/W, single pulse Gate Charge Characteristics 0 20 40 60 80 100 120 140 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-20A VDS=-15V VDS=-10V Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) -ID, Maximum Drain Current(A)VGS=-4.5V, Tj(max)=150°C, RθJC=2.5°C/W, single pulse Silicon Limit Package Limit Typical Transfer Characteristics 100 120 140 160 180 200 012345 -VGS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 6/ 10 MTA5D0P01H8 CYStek Product Specification Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-5V Pulsed Ta=25°C Single Pulse Maximum Power Dissipation 300 600 900 1200 1500 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=2.5°C/W Power Derating Curve 0 25 50 75 100 125 150 175 TC, Case Temperature(℃) PD, Power Dissipation(W) Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 7/ 10 MTA5D0P01H8 CYStek Product Specification Recommended Soldering Footprint & Stencil Design unit : mm

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 8/ 10 MTA5D0P01H8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 9/ 10 MTA5D0P01H8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 150°C 200°C 60-120 seconds 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) − Time (tL) 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. Time 25 °C to peak temperature 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.

CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 10/ 10 MTA5D0P01H8 CYStek Product Specification DFN5×6 Dimension Millimeters Marking: A5D0 P01 Device Name Date Code 8-Lead DFN5×6 Plastic Package E 5.90 6.10 0.232 0.240 θ 8° 12° 8° 12° E1 5.70 5.80 0.224 0.228 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.