MTA4D0P02V8 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating package Equivalent Circuit Outline
Ordering Information
MTA4D0P02V8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTA4D0P02V8 DFN3×3 G：Gate S：Source D：Drain BVDSS -20V ID@ TC=25C, VGS=-4.5V -89A ID@ TA=25C, VGS=-4.5V -19A RDSON @VGS=-4.5V , ID=-20A 3.9 mΩ(typ.) RDSON @VGS=-3V , ID=-20A 5.2 mΩ(typ.) RDSON @VGS=-2.5V , ID=-20A 6.3 mΩ(typ.) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name Pin 1
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 2/10 MTA4D0P02V8 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -20 V Gate-Source V oltage VGS ±10 Continuous Drain Current @ TC=25C, VGS=-4.5V ID -89 A Continuous Drain Current @ TC=70C, VGS=-4.5V -71 Continuous Drain Current @ TA=25C, VGS=-4.5V -19 Continuous Drain Current @ TA=70C, VGS=-4.5V -15 Pulsed Drain Current IDM -200 *1 Avalanche Current @ L=0.1mH IAS -50 Avalanche Energy @ L=1mH, ID=-18A, VDD=-15V EAS 162 *4 mJ Repetitive Avalanche Energy @ L=0.05mH EAR 6 *2 Total Power Dissipation TC=25℃ PD 62.5 W TC=100℃ 25 TA=25℃ 2.5 *3 TA=70℃ 1.6 *3 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2 C/W Thermal Resistance, Junction-to-ambient, max RθJA 50 *3 Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125C/W when mounted on minimum copper pad. 4. 100% tested by conditions of L=0.1mH, IAS=-10A, VGS=-10V , VDD=-15V Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V VGS=0V , ID=-250μA VGS(th) -0.4 - -1.5 VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±10V, VDS=0V IDSS - - -1 μA VDS=-16V , VGS=0V - - -10 VDS=-16V , VGS=0V , Tj=125C RDS(ON) *1 - 3.9 5.1 VGS=-4.5V, ID=-20A - 5.2 7.8 VGS=-3.0V, ID=-20A - 6.3 9.5 VGS=-2.5V, ID=-20A GFS *1 - 32.6 - S VDS=-5V, ID=-3A
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 3/10 MTA4D0P02V8 CYStek Product Specification Electrical Characteristics(Cont.) (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Dynamic Ciss - 7514 - pF VDS=-10V , VGS=0V , f=1MHz Coss - 643 - Crss - 417 - Qg *1, 2 - 84 110 nC VDS=-10V , ID=-20A, VGS=-4.5V Qgs *1, 2 - 14.5 - Qgd *1, 2 - 25.1 - ns VDS=-10V , ID=-20A, VGS=-4.5V RG=6Ω tr *1, 2 - 90.8 - tf *1, 2 - 158.4 - Rg - 5.6 - f=1MHz Source-Drain Diode IS *1 - - -73 A ISM *3 - - -200 VSD *1 - -0.7 -1 V IF=-1A, VGS=0V trr - 96.8 - ns IF=-20A, dIF/dt=100A/μs Qrr - 202 - nC Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 4/10 MTA4D0P02V8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 0 1 2 3 4 5 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) 8V,7V,6V,5V,4.5V,4V,3.5V,3V -VGS=1.5V 2.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) -BVDSS, Normalized Drain-Source Breakdown Voltage -ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-2.5V -3.0V -4.5V -5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 4 8 12 16 20 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 2 4 6 8 -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=-20A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-20A RDSON @ Tj=25°C : 3.9mΩ typ
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 5/10 MTA4D0P02V8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 4 8 12 16 20 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) VGS(th), Normalized Threshold Voltage -ID=250μA -ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed -VDS=5V Gate Charge Characteristics 0 40 80 120 160 200 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) -ID=20A -VDS=10V -VDS=15V Maximum Safe Operating Area 0.01 0.1 100 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TA=25°C, Tj=150°C VGS=-4.5V, RθJA=50°C/W Single Pulse DC 100ms RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V, RθJA=50°C/W
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 6/10 MTA4D0P02V8 CYStek Product Specification Typical Characteristics(Cont.) Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs RDSON Limited TC=25°C, VGS=-4.5V,Tj=150°C RθJC=2°C/W, Single Pulse Maximum Drain Current vs Case Temperature 100 120 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=-4.5V, RθJC=3°C/W Typical Transfer Characteristics 100 0 1 2 3 4 5 -VGS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=5V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=50°C/W Single Pulse Maximum Power Dissipation 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=2°C/W
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 7/10 MTA4D0P02V8 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50° C/W Transient Thermal Response Curves 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2 °C/W
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 8/10 MTA4D0P02V8 CYStek Product Specification Reel Dimension Carrier Tape Dimension Pin #1
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 9/10 MTA4D0P02V8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2. For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.
CYStech Electronics Corp. Spec. No. : C036V8 Issued Date : 2018.11.21 Revised Date : 2019.02.14 Page No. : 10/10 MTA4D0P02V8 CYStek Product Specification DFN3×3 Dimension DIM Millimeters Inches DIM Millimeters Inches D3 0.13 TYP 0.005 TYP θ - 12° - 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Date Code S S S G D D D D A4D0 P02