MTA40B03Q8 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / tape & reel SOP-8 MTA40B03Q8 G:Gate S:Source D:Drain BVDSS -30V ID@TA=25 C, VGS=-10V -4.6A RDSON@VGS=-10V , ID=-5A 43.6mΩ(typ) RDSON@VGS=-4.5V , ID=-4A 49.6mΩ(typ) RDSON@VGS=-2.5V , ID=-1A 58.1mΩ(typ) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name Pin 1 S1 G1 S2 D2 D2 D1 D1

CYStech Electronics Corp. Spec. No. : C388Q8 Issued Date : 2018.12.17 Revised Date : Page No. : 2/9 MTA40B03Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS -30 V Gate-Source V oltage VGS ±12 Continuous Drain Current @ VGS=-10V , TC=25C ID -7.8 A Continuous Drain Current @ VGS=-10V , TC=100C -4.9 Continuous Drain Current @ VGS=-10V , TA=25 C (Note 2) -4.6 Continuous Drain Current @ VGS=-10V , TA=70 C (Note 2) -3.7 Pulsed Drain Current (Note 1) IDM -30 Single Pulse Avalanche Current @ L=0.1mH IAS -12 Single Pulse Avalanche Energy @ L=1mH, IAS=-6A, VDS=-15V EAS 18 mJ Power Dissipation for Dual Operation PD W Power Dissipation for Single Operation 2 (Note 2) 1 (Note 3) Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 22 C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 (Note 2) 125 (Note 3) Note : 1. Pulse width limited by maximum junction temperature 2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3. Surface mounted on minimum copper pad, pulse width≤10s. Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0V, ID=-250μA VGS(th) -0.6 - -1.3 VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±12V, VDS=0V IDSS - - -1 μA VDS=-24V , VGS=0V - - -5 VDS=-24V , VGS=0V, Tj=55°C *RDS(ON) - 43.6 58 VGS=-10V, ID=-5A - 49.6 64 VGS=-4.5V, ID=-4A - 58.1 90 VGS=-2.5V, ID=-1A *GFS - 7.7 - S VDS=-10V, ID=-3A Dynamic Ciss - 946 - pF VDS=-15V , VGS=0V, f=1MHz Coss - 70 - Crss - 57 -

CYStech Electronics Corp. Spec. No. : C388Q8 Issued Date : 2018.12.17 Revised Date : Page No. : 3/9 MTA40B03Q8 CYStek Product Specification *td(ON) - 4.6 - ns VDS=-15V , ID=-4A, VGS=-10V , RG=6Ω *tr - 16.8 - *td(OFF) - 114 - *tf - 52.2 - *Qg - 10.7 - nC VDS=-15V , ID=-5A, VGS=-4.5V *Qgs - 1.7 - *Qgd - 2.7 - Rg - 31 -  f=1MHz Source-Drain Diode *VSD - -0.77 -1 V VGS=0V , IS=-1A *Qrr - 8.1 - nC IF=-4A, dIF/dt=100A/μs *trr - 3.7 - ns *Pulse Test : Pulse Width 300μs, Duty Cycle2% Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C388Q8 Issued Date : 2018.12.17 Revised Date : Page No. : 4/9 MTA40B03Q8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) 10V,5V,4V,3V -VGS=1.5V 2.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5V VGS=-10V VGS=-2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 2 4 6 8 10 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 0 2 4 6 8 10 -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-5A Drain-Source On-State Resistance vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State ResistanceVGS=-10V, ID=-5A RDS(ON)@Tj=25°C : 43.6mΩ typ.

CYStech Electronics Corp. Spec. No. : C388Q8 Issued Date : 2018.12.17 Revised Date : Page No. : 5/9 MTA40B03Q8 CYStek Product Specification Typical Characteristics (Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold VoltageID=-250μA ID=-1mA Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs RDSON limited TA=25°C, Tj=150°C VGS=-10V, RθJA=62.5°C/W Single Pulse Gate Charge Characteristics 0 4 8 12 16 20 24 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-5A VDS=-15V Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A)TA=25°C, VGS=-10V, RθJA=62.5°C/W Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-10V Pulsed Ta=25°C

CYStech Electronics Corp. Spec. No. : C388Q8 Issued Date : 2018.12.17 Revised Date : Page No. : 6/9 MTA40B03Q8 CYStek Product Specification Typical Characteristics (Cont.) Typical Transfer Characteristics 0 1 2 3 4 5 -VGS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=62.5°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=62.5°C/W

CYStech Electronics Corp. Spec. No. : C388Q8 Issued Date : 2018.12.17 Revised Date : Page No. : 7/9 MTA40B03Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C388Q8 Issued Date : 2018.12.17 Revised Date : Page No. : 8/9 MTA40B03Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C388Q8 Issued Date : 2018.12.17 Revised Date : Page No. : 9/9 MTA40B03Q8 CYStek Product Specification SOP-8 Dimension *: Typical DIM Inches Millimeters DIM Inches Millimeters Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:  Lead: Pure tin plated.  Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:  All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  CYStek reserves the right to make changes to its products without notice.  CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code Device Name A40 B03 □□□□