MTA090N02KC3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C983C3 Issued Date : 2014.11.19 Revised Date : Page No. : 1/8 MTA090N02KC3 CYStek Product Specification 20V N-Channel Enhancement Mode MOSFET MTA090N02KC3 BVDSS 20V ID @VGS=4V , TA=25°C 1.4A RDSON@VGS=4V , ID=1A 63mΩ (typ) RDSON@VGS=2.5V ,ID=1A 83mΩ (typ) Features RDSON@VGS=1.8V ,ID=500mA 160mΩ (typ) • Simple drive requirement

  • Small package outline
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

MTA090N02KC3-0-T1-G SOT-523 (Pb-free lead plating package) 3000 pcs / tape & reel MTA090N02KC3 SOT-523 D G：Gate S：Source D：Drain S G Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C983C3 Issued Date : 2014.11.19 Revised Date : Page No. : 2/8 MTA090N02KC3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 20 Gate-Source V oltage VGS ±8 V Continuous Drain Current @ TA=25°C, VGS=4V 1.4 (Note 3) Continuous Drain Current @ TA=70°C, VGS=4V ID 1.1 (Note 3) Pulsed Drain Current (Notes 1, 2) IDM 6.0 A Power Dissipation PD 280 (Note 3) mW ESD susceptibility VESD 1200 (Note 4) V Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient, max (Note 3) Rɵja 450 Thermal Resistance, Junction-to-Case, max Rɵjc 312 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board. 4. Human body model, 1.5kΩ in series with 100pF. Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 20 - - VGS=0V , ID=250μA VGS(th) 0.3 - 1.0 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±8V , VDS=0V - - 1 VDS=20V , VGS=0V IDSS - - 10 μA VDS=16V , VGS=0V (Tj=70°C) - 63 100 VGS=4V , ID=1A - 83 120 VGS=2.5V , ID=1A *RDS(ON) - 160 250 mΩ VGS=1.8V , ID=500mA *GFS - 3.8 - S VDS=3V , ID=1A Dynamic Ciss - 159 - Coss - 26 - Crss - 27 - pF VDS=15V , VGS=0, f=1MHz td(ON) - 4.4 - tr - 17.8 - td(OFF) - 14.8 - tf - 17 - ns VDS=10V , ID=200mA, VGS=4.5V , RG=10Ω Qg - 2.6 - Qgs - 0.56 - Qgd - 0.4 - nC VDS=10V , ID=200mA, VGS=4.5V

CYStech Electronics Corp. Spec. No. : C983C3 Issued Date : 2014.11.19 Revised Date : Page No. : 3/8 MTA090N02KC3 CYStek Product Specification Source-Drain Diode *VSD - 0.84 1.2 V VGS=0V , IS=1A *trr - 4.6 - ns *Qrr - 1.0 - nC IF=0.2A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Typical Characteristics Typical Output Characteristics 00 .511 .5 2 10V, 9V, 8V, 7V, 6V, 5V, 4V, 3V VDS, Drain-Source Voltage(V) ID, Drain Current (A) VGS=2V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 200 400 600 800 0.01 0.1 1 10 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=1.8V VGS=2V VGS=2.5V VGS=3V VGS=4V VGS=1.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V

CYStech Electronics Corp. Spec. No. : C983C3 Issued Date : 2014.11.19 Revised Date : Page No. : 4/8 MTA090N02KC3 CYStek Product Specification Typical Characteristics(Cont.) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 700 800 012345678 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=1A Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=4V, ID=1A RDS( ON)@Tj=25°C : 63mΩ typ. VGS=2.5V, ID=1A RDS( ON)@Tj=25°C : 83mΩ typ. Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold VoltageID=250μA ID=1mA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=450°C/W Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=3V

CYStech Electronics Corp. Spec. No. : C983C3 Issued Date : 2014.11.19 Revised Date : Page No. : 5/8 MTA090N02KC3 CYStek Product Specification Typical Characteristics(Cont.) Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=4V, RθJA=450°C/W Single Pulse RDS( ON) Limited Maximum Drain Current vs JunctionTemperature 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=4V, RθJA=450°C/W Gate Charge Characteristics 0123456 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=10V ID=200mA Typical Transfer Characteristics 012345 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=3V TA=25°C Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=450°C/W

CYStech Electronics Corp. Spec. No. : C983C3 Issued Date : 2014.11.19 Revised Date : Page No. : 6/8 MTA090N02KC3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C983C3 Issued Date : 2014.11.19 Revised Date : Page No. : 7/8 MTA090N02KC3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C983C3 Issued Date : 2014.11.19 Revised Date : Page No. : 8/8 MTA090N02KC3 CYStek Product Specification SOT-523 Dimension *: Typical Marking: Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. N H F J A B C D E G I K L M O Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-523 Plastic Surface Mounted Package CYStek Package Code: C3 HN XX Date Code Device Code