MTA025B01V8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

MTA025B01V8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTA025B01V8 DFN3×3 G：Gate S：Source D：Drain Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 2/9 MTA025B01V8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS -14 Gate-Source V oltage VGS ±8 V TA=25 °C, VGS=-4.5V -5 Continuous Drain Current *2 TA=70 °C, VGS=-4.5V IDSM -4 TC=25 °C, VGS=-4.5V -7.1 Continuous Drain Current TC=70 °C, VGS=-4.5V ID -5.7 Pulsed Drain Current * 1 IDM -40 A TA=25°C, Single device operation 1.5 *2 TA=70°C, Single device operation 0.96 *2 TA=25°C, Single device value at dual operation 1.24 *2 TA=70°C, Single device value at dual operation PDSM 0.79 *2 TC=25°C 2.8 Total Power Dissipation TC=100°C PD 1.1 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Max. Thermal Resistance, Junction-to-ambient, single device operation 84 *2 Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation Rth,j-a 101 *2 Max. Thermal Resistance, Junction-to-case Rth,j-c 40 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice Rth,j-a will be determined by customer’s PCB characteristics. 216°C/W when mounted on a minimum pad of 2 oz. copper. Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -14 - - VGS=0V , ID=-250μA VGS(th) -0.4 - -1 V VDS=VGS, ID=-250μA IGSS - - ±100 VGS=±8V , VDS=0V - - -100 nA VDS=-12V , VGS=0V , Tj=25℃ IDSS - - -10 μA VDS=-12V , VGS=0V , Tj=55℃ - 30.7 41.5 VGS=-2.5V , ID=-2.2A *RDS(ON) 49.0 66.0 mΩ VGS=-1.8V , ID=-2.2A *GFS - 13 - S VDS=-5V , ID=-5A Dynamic Ciss - 1088 - Coss - 251 - Crss - 229 - pF VDS=-10V, VGS=0V, f=1MHz *td(ON) - 13.6 - *tr - 25.6 - *td(OFF) - 74.6 - *tf - 66.6 - ns VDS=-10V, ID=-5A, VGS=-4.5V, RG=3Ω

CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 3/9 MTA025B01V8 CYStek Product Specification *Qg - 14.2 - *Qgs - 1.7 - *Qgd - 5.1 - nC VDS=-10V, ID=-5A, VGS=-4.5V Body Diode *VSD - -0.77 -1 V VGS=0V , IS=-1A *trr - 33.5 - ns *Qrr - 7.7 - nC IF=-5A, VGS=0V , dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 4/9 MTA025B01V8 CYStek Product Specification Typical Characteristics : Typical Output Characteristics 012345 DS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=1.5V 10V,9V,8V,7V,6V,5V,4V 2.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-1.8V VGS=-2.5V VGS=-4.5V VGS=-1.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 012345678 -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-4.5A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State ResistanceVGS=-4.5V, ID=-4.5A RDSON @Tj=25°C: 22.8mΩ typ. VGS=-2.5V, ID=-2.2A RDSON@Tj=25°C : 30.7mΩ typ.

CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 5/9 MTA025B01V8 CYStek Product Specification Typical Characteristics(Cont.) : Capacitance vs Drain-to-Source Voltage 100 1000 10000 0123456789 1 0 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) Pulsed Ta=25°C VDS=-10V VDS=-5V Gate Charge Characteristics 0 6 12 18 24 30 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-5A VDS=-10V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C RθJA=84°C/W, VGS=-4.5V Single Pulse RDS(ON) Limited Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)VGS=-4.5V, RθJA=84°C/W

CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 6/9 MTA025B01V8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-5V Single Pulse Maximum Power Dissipation 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=150°C TA=25°C RθJA=84°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=84°C/W

CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 7/9 MTA025B01V8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 8/9 MTA025B01V8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 9/9 MTA025B01V8 CYStek Product Specification DFN3×3 Dimension E1 3.150 3.450 0.124 0.136 θ 9° 13° 9° 13° E2 1.535 1.935 0.060 0.076 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Date Code S1 G1 S2 G2 D1 D1 D2 D2 A025 B01