MSR1560E2 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • 175℃ operating junction temperature
  • Glass passivated chip junction
  • Low leakage current
  • S u p e r f a s t r e c o v e r y t i m e
  • Low switching loss, high efficiency
  • High forward surge capability
  • High temperature soldering guaranteed : 260 ℃/40s, 0.25”(6.35mm) from case
  • Pb-free lead plating package Mechanical Data
  • Case: TO-220AC molded plastic
  • Mounting Position: Any
  • Weight: 1.85 grams, 0.065 ounce approximately
  • Terminals: Pure tin plated, solderable per J-STD-002 and JESD22-B102
  • Epoxy: UL 94V-0 rate flame retardant
  • Polarity : As marked.
  • Mounting torque: 10 in.-lb. maximum E q u i v a l e n t C i r c u i t O u t l i n e TO-220AC MSR1560E2 K A

CYStech Electronics Corp. Spec. No. : C480E2 Issued Date : 2010.05.26 Revised Date : Page No. : 2/4 MSR1560E2 CYStek Product Specification Maximum Ratings and Electrical Characteristics (Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Parameter Symbol Min. Typ. Max. Units Maximum Recurrent peak reverse voltage VRRM 600 V Maximum RMS voltage VRMS 420 V Maximum DC blocking voltage VDC 600 V Maximum instantaneous forward voltage at IF=15A VF 1.9 2.5 V Maximum Average forward rectified current @ TC=100℃ IF(AV) 15 A Non-repetitive peak forward surge current @ 8.3ms single half sine wave superimposed on rated load (JEDEC method) IFSM 150 A VR=600 V, TC=25℃ 10 Maximum instantaneous reverse current at VR=600 V, TC=125℃ IR 500 μA Maximum reverse recovery time IF=1A, VR=30V, dIF/dt=100A/μs trr 30 ns Typical junction capacitance @ f=1MHz and applied 4V reverse voltage CJ 46 pF Storage temperature range Tstg -65 +175 ℃ Operating junction temperature range TJ -65 +175 ℃ Thermal Data Parameter Symbol Value Unit Maximum Thermal Resistance, Junction-to-case Rth,j-c 1.7 °C/W Maximum Thermal Resistance, Junction-to-ambient Rth,j-a 60 °C/W

Ordering Information

(RoHS compliant package) 50 pcs / Tube, 40 Tubes/Box

CYStech Electronics Corp. Spec. No. : C480E2 Issued Date : 2010.05.26 Revised Date : Page No. : 3/4 MSR1560E2 CYStek Product Specification Typical Characteristics Forward Current Derating Curve 0 25 50 75 100 125 150 175 Case Temperature---T C(℃) Average Forward Current---Io(A) resistive or inductive load Forward Current vs Forward Voltage 100 1000 10000 100000 Forward Voltage---V F(V) Instantaneous Forward Current---IF(mA) Pulse width=300μs, 1% Duty cycle Tj=25℃ Tj=150℃ Reverse Leakage Current vs Reverse Voltage 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 Reverse Voltage---V R(V) Reverse Leakage Current---I R(μA) Tj=75℃ Tj=25℃ Tj=125℃ Junction Capacitance vs Reverse Voltage 100 1000 0.1 1 10 100 Reverse Voltage---V R(V) Junction Capacitance---C J(pF) Tj=25℃, f=1.0MHz Per Leg

CYStech Electronics Corp. Spec. No. : C480E2 Issued Date : 2010.05.26 Revised Date : Page No. : 4/4 MSR1560E2 CYStek Product Specification TO-220AC Dimension Marking: Device MSR Name 1560 Date Code K A □□□□ Style: Pin 1.Cathode 2.Anode 2-Lead TO-220AC Plastic Package CYStek Package Code: E2 *:Typical H 0.118 0.134 3.00 3.40 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.