MSP120N08G

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

• 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V advanced technology. which provides high performance in on-state resistance, fast switching performance and excellent quality. MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications. - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability G S D TO-220 G D S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter MSP120N08G Units VDSS Drain-Source Voltage 80 V ID Drain Current - Continuous (T C = 25℃) 120 A - Continuous (TC = 100℃)6 7 A IDM Drain Current - Pulsed (Note 1) 420 A VGSS Gate-Source Voltage ±20 VGSS g ± EAS Single Pulsed Avalanche Energy (Note 2) 144.5 mJ IAR Avalanche Current (Note 1) 120 A PD Power Dissipation (TC = 25℃) 157 W - Derate above 25℃ 1.26 W/ ℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter MSP120N08G Units R Thermal Resistance Junction-to-Case 08 ℃/W * Drain current limited by maximum junction temperature. RθJC Thermal Resistance, Junction to Case 0.8 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W

Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Ch t i ti 20N08GOff Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 uA 80 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.1 -- V/ ℃ IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V -- -- 1 uA VDS = 64 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0V -- -- 100 nAIGSSF Gate Body Leakage Current, Forward VGS 20 V, VDS 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 60A -- 5.5 7.0 mΩ gFS Forward Transconductance V DS = 10 V, ID = 60 A (Note 3) -- 47 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 40 V, VGS = 0 V, f = 1.0 MHz -- 3841 -- pFCoss Output Capacitance -- 652 -- Crss Reverse Transfer Capacitance -- 34 -- Switching Characteristics td(on) Turn-On Delay Time -- 15.6 --() y VDs = 40 V, ID = 60 A, RG = 3.0 Ω (Note3, 4) nstr Turn-On Rise Time -- 32.7 -- td(off) Turn-Off Delay Time -- 24.2 -- tf Turn-Off Fall Time -- 15.1 -- Qg Total Gate Charge VDS = 40 V, ID = 60 A, VGS = 10 V (Note 3, 4) -- 59.4 -- nCQgs Gate-Source Charge -- 16.5 -- Qgd Gate-Drain Charge -- 12.3 -- Drain-Source Diode Characteristics and Maximum Ratings VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 60 A -- 0.9 1.2 V trr Reverse Recovery Time V GS = 0 V, IS = 60 A, -- 64.3 -- ns Qrr Reverse Recovery Charge dI F / dt = 100 A/us (Note 3) -- 152.7 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 17A,L=1.0mH,VGS = 10V, Starting TJ = 25°C 3. Pulse Test : Pulse width  300us, Duty cycle  2% 4 Et i l l i dd t f t i t t4. Essentially independent of operating temperature

Gate Charge Test Circuit & Waveform 20N08G VGS 10V Qg Qgs QgdVGS VDS 300nF 50KΩ 200nF12V Same Type as DUT Current Regulator Charge 3mA Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT R1 R2 Resistive Switching Test Circuit & Waveforms Vout 90%VDD Vout Vin RL Vin 10% td(on) tr t on t off td(off) tf ( 0.5 rated VDS ) 10V Vin DUT RG Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2---- BV -- V BVDSS LL V 2 BVDSS -- VDD Vary tp to obtain required peak ID 10V VDDC VDS ID RG DUT BVDSS VDD IAS VDS (t) ID (t) t p t p Time

Peak Diode Recovery dv/dt Test Circuit & Waveforms 20N08G DUT VDS I S L S DriverVGS RG Same Type as DUT V • dv/dt controlled by밨 VDD

• dv/dt controlled by RGVGS • dv/dt controlled by 밨G
• I S controlled by Duty Factor 밆? 10V VGS (D r i v e r) D = Gate Pulse Width Gate Pulse Period dv/dt controlled by RG
• ISD controlled by pulse period ( Driver ) I S ( DUT ) IFM , Body Diode Forward Current IRM di/dt VDS ( DUT ) VDDVf Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop