DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
1200 V lt S h ttk R tifi
Higher safety margin against overvoltage-1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications PackageApplications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Package Type : TO-220 -2 1、Cathode 2、Anode Case CA Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter MSP02120V1 Units VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1200 V VDC DC Blocking Voltage 1200 V IF Continuous Forward Current @Tc=25 ℃ @Tc=125℃ @Tc=150℃ 9.5 A IFRM Repetitive Peak Forward Surge Current 10 AIFRM epe e ea o a d Su ge Cu e @TC=25 ̊C, tp = 10 ms, Half Sine Wave 10 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C, tp = 10 ms, Half Sine Wave 18 A IF.MAX Non-Repetitive Peak Forward Surge Current @TC=25 ̊C, tp = 10 us, Plus 180 A Ptot Power Dissipation @Tc=25 ℃ @Tc=110℃ 76.5 33.2 W TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ̊ C page1
Symbol Test Conditions Test Conditions Min Typ Max Unit Electrical Characteristics TC = 25°C unless otherwise noted Symbol Test Conditions Test Conditions Min Typ Max Unit VF Forward Voltage IF=2A, TC=25°C IF=2A, TC=175°C - 1.4 2.1 1.8 2.5 V IR Reverse Current VR=1200V, TC=25°C VR=1200V, TC=175°C - 2 100 μA QC Total Capacitive Charge VR =800V, IF =2A TJ = 25°C Qc= - 11.2 - nC r dv V VC ）（Qc C Total Capacitance VR =0V, TJ = 25°C, f=1MHz VR =400V, TJ = 25°C, f=1MHz VR =800V, TJ = 25°C, f=1MHz 148 - pF EC Capacitance Stored Energy VR=800V - 5.8 - μJ dvVC ）（ Thermal Characteristics Symbol Parameter Typ Unit RθJC Thermal Resistance from Junction to Case 1.96 ℃/W Typical Characteristics 3.0 3.5 4.0 Tj=25 O C Tj=75 O C Tj=125 O C O 100 0.5 1.0 1.5 2.0 2.5IF (A) Tj=175 O C IR (A) Tj=25 O C Tj=75 O C Tj=125 O C Tj=175 O C Figure 1.Forward Characteristics Figure 2. Reverse Characterist ics VF (V) 0 200 400 600 800 1000 1200 1400 1600 VR (V)