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Features

-V DS=40V I =100A @V =10Vadvanced Technology,which provides high performance in on-state Resistance,fast switching performance and excellent quality.This Power MOSFET is suitable device for Synchronous Rectification for Server and general purpose applications. - ID=100A @VGS=10V -R DS(ON)<1.0mΩ @VGS=10V - Fast switching - 100% avalanche tested - 100% Rg tested DDDD SSSG DDDD GSSS PDFN5*6 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter MSN04R010S Units VDSS Drain-Source Voltage 40 V ID Drain Current - Continuous (T C = 25℃) 100 A - Continuous (TC = 100℃)3 9 A IDM Drain Current - Pulsed (Note 1) 400 A VGSS Gate-Source Voltage ±20 VGSS g ± EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ PD Power Dissipation (TC = 25℃) 96.2 W - Derate above 25℃ 0.77 W/ ℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.3 ℃/W RθJA Thermal Resistance, Junction-to-Ambient -- 50 ℃/W Drain current limited by maximum junction temperature.

Ordering Information

Part Number Temp.Range Package Packing RoHS Status MSN04R010S -55 ~+150℃ PDFN5*6 Tape&Reel Halogen Free

Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 4R010SOff Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 uA 40 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.05 -- V/ ℃ IDSS Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V -- -- 1 uA VDS = 32 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward V GS = 20 V, VDS = 0 V -- -- 100 n A IGSSR Gate-Body Leakage Current, Reverse V GS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 uA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 50 A -- 0.8 1.0 mΩ gFS Forward Transconductance VDS = 10 V, ID = 50A -- 185 -- SgFS Forward Transconductance VDS 10 V, ID 50A 185 S Dynamic Characteristics Ciss Input Capacitance VDS = 20 V, VGS = 0 V, f = 1.0 MHz -- 6892.7 -- pF Coss Output Capacitance -- 147.2 -- pF Crss Reverse Transfer Capacitance -- 2058.7 -- pF Switching Characteristics td(on) Turn-On Delay Time VGS = 10 V, ID=50A, VDS = 20 V,RG=3.0 Ω -- 21.8 -- ns tr Turn-On Rise Time -- 18.8 -- ns td(off) Turn-Off Delay Time -- 96.3 -- ns tf Turn-Off Fall Time -- 44.1 -- ns Qg Total Gate Charge VDS = 20 V, ID =50A, VGS = 10 V -- 103.5 -- nC Qgs Gate-Source Charge -- 18.5 -- nC Qgd Gate-Drain Charge -- 13.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS =50A -- 0.8 1.2 V trr Reverse Recovery Time V GS = 0 V, IS =50A, -- 57.7 -- ns Qrr Reverse Recovery Charge dI F / dt = 100 A/us (Note 3) -- 105.4 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS =30.0A,L=1mH, VGS = 10V, Starting TJ = 25°C 3. Pulse Test : Pulse width  300us, Duty cycle  2% 4. Essentially independent of operating temperature

Figure 1. On-Region Characteristics Figure 2. Transfer Character istics

1.0 VGS=10V

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage Figure 5. Capacitance Characteristics Figure 6. Gate Charge Char acteristics

Gate Charge Test Circuit & Waveform 4R010S VGS 10V Qg Qgs QgdVGS VDS 300nF 50KΩ 200nF12V Same Type as DUT Current Regulator Charge 3mA Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT R1 R2 Resistive Switching Test Circuit & Waveforms Vout 90%VDD Vout Vin RL Vin 10% td(on) tr t on t off td(off) tf ( 0.5 rated VDS ) 10V Vin DUT RG Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS---- BV -- V BVDSS LL V 2 BVDSS -- VDD Vary tp to obtain required peak ID 10V VDDC VDS ID RG DUT BVDSS VDD IAS VDS (t) ID (t) t p t p Time

Peak Diode Recovery dv/dt Test Circuit & Waveforms 4R010S DUT VDS I S L S DriverVGS RG Same Type as DUT V • dv/dt controlled by밨 VDD

  • dv/dt controlled by RGVGS • dv/dt controlled by 밨G
  • I S controlled by Duty Factor 밆? 10V VGS (D r i v e r) D = Gate Pulse Width Gate Pulse Period dv/dt controlled by RG
  • ISD controlled by pulse period ( Driver ) I S ( DUT ) IFM , Body Diode Forward Current IRM di/dt VDS ( DUT ) VDDVf Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop