MSGN39TA MICRO-ELECTRONICS | Alldatasheet
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SGNITFLA: Fa ic ULTRA HIGH
8 BRIGHTNESS
a RED, GREEN ~ UAL COLOR LAMP DESCRIPTION 93,000.12) A red and green lamp made of L- NI i GaAlAs, GaP chi fferi 0¢0.04) | 5080.29 , ryt 5 As a chip offering a 1.0 vo | 5:08c0.2> Gan bee 1 o4.05¢0.169 changing color characteristics. These ————— Nee two light emitting diodes are L | GREEN ANODE mounted in a 3 mm_ diameter max | Po 8 RED CATHODE 9.75" Vi a sige ~ transparent lens . 0.03) WY 17.560.69>min 05+01 NL RED ANODE & (02) GREEN CATHODE ® All dimension in mm{inch) © No Scale © Tol: +/-0.3mm_ ABSOLUTE MAXIMUM RATINGS _ RED GREEN Power Dissipation @ Ta=25°C 100mW 100mW Forward Current, DC (IF) 30mA 30mA Operating Temperature Range -55 to +55°C Storage Temperature Range -55 to +100°C Lead Soldering Temperature (1/16" from body) 260°C _.. Maximum Soldering Time(<260°C) 3sec ELECTRO-OPTICAL CHARACTERISTICS = (Ta=25°C) PARAMETER SYMBOL] RED | GREEN CONDITIONS Forward Voltage MAX VF 3 3 Vv IF=20mA. Luminous Intensity MIN IV 90 60 med IF=20mA. TYP 140 70 med IF=20mA Peak Wavelength TYP hp 660 570 om IF=20mA Spectral Line Half Width TYP An 20 30 nm IF=20mA Viewing Angle 20 1/2 50 50 -degree IF=20mA BZ MICRO ELECTRONICS LTD. “ 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong.