MSC85623 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C TRANS1.SYM SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 5.0 mA 14 V BV CER IC = 5.0 mA RBE = 510 Ω 30 V BV CBO IC = 5.0 mA 40 V BV EBO IE = 1.0 mA 3.5 V ICBO VCB = 21 V 2.0 mA PG ηηηηC VCC = 28 V Pout = 5.0 W f = 3.0 GHz 5.5 dB NPN RF TRANSISTOR MSC85623 DESCRIPTION: The ASI MSC85623 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz. MAXIMUM RATINGS IC 150 mA VCEO 14 V VCB 40 V VEB 3.5 V PDISS 25 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 7.0 O C/W PACKAGE 230 2L FLG 1 = Collector 2 = Emitter 3 = Base