MSC81250M

MSC81250M ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. MI NI MUM i nches / m m . 100 / 2. 54 .1 1 0 / 2 .7 9 . 376 / 9. 55 . 395 / 10. 03 B C D E F G A MAXI MUM . 396 / 10. 06 . 407 / 10. 34 . 130 / 3. 30 i nches / m m . 450 / 11. 43 H DI M K L I J . 640 / 16. 26 . 890 / 22. 61 . 004 / 0. 10 . 660 / 16. 76 . 910 / 23. 11 .0 0 7 / 0 .1 8 H F C E N ØD M G 4x . 062 x 45° P L K I J 2X B . 025 x 45° A N M . 118 / 3. 00 . 131 / 3. 33 . 020 / 0. 51 . 030 / 0. 76 . 193 / 4. 90 . 125 / 3. 18 . 395 / 10. 03 . 415 / 10. 54 . 072 / 1. 83. 052 / 1. 32 P . 230 / 5. 84 CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCER IC = 25 mA R BE = 10 Ω 65 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 50 V 25 mA hFE VCE = 5.0 V IC = 1.0 A 15 120 --- PG ηC POUT VCC = 50 V PIN = 250 W f = 1025 - 1150 MHz 6.2 250 6.5 270 dB W NPN SILICON RF POWER TRANSISTOR MSC81250M DESCRIPTION: The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz. FEATURES:

• Internal Input/Output Matching Networks
• PG = 6.2 dB at 250 W/1150 MHz
• Omnigold™ Metalization System MAXIMUM RATINGS IC 17.8 A VCC 55 V PDISS 600 W @ TC ≤ 80 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 0.2 °C/W PACKAGE STYLE .400 2NL FLG 1 = Collector 2 = Base 3 = Emitter