MSC81111 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCER IC = 5.0 mA R BE = 10Ω 45 V BVCBO IC = 1.0 mA 45 V ICBO VCB = 28 V 1.0 mA BVEBO IE = 1.0 mA 3.5 V hFE VCE = 5.0 V IC = 200 mA 15 120 --- COB VCB = 28 V f = 1.0 MHz 6.5 pF Pout ηηηηC GP VCC = 28 V P in = 500 mW f = 1.0 GHz 5.0 6.6 11.2 W dB NPN SILICON RF POWER TRANSISTOR MSC81111 DESCRIPTION: The MSC81111 is Designed for Class "C" Amplifier Applicatioons from 0.4 to
1.2 GHz, Supplied in Common Base
Package. MAXIMUM RATINGS IC 600 mA VCB 35 V PDISS 21.8 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 8 O C/W PACKAGE STYLE HLP-1 1 = Emitter 2 = Collector 3 = Base Inches Millimeters Dim: Min Max Min Max A 0.790 0.810 20.07 20.6 B 0.225 0.235 5.72 5.97 C 0.144 0.180 3.66 4.58 D 0.115 0.125 2.93 3.17 E 0.055 0.065 1.40 1.65 F 0.045 0.055 1.15 1.39 H 0.115 0.135 2.93 3.42 J 0.003 0.006 0.08 0.15 K 0.225 0.275 5.72 6.98 N 0.220 0.240 5.59 6.09 Q 0.125 0.135 3.18 3.42 U 0.552 0.572 14.03 14.5