MSC81035M

MSC81035M ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCER IC = 10 mA R BE = 10 Ω 65 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 50 V 5.0 mA hFE VCE = 5.0 V IC = 500 mA 15 120 --- PG ηηηηC VCC = 50 V POUT = 35 W f = 1025-1150 MHz PIN = 3.0 W 10.7 11.2 dB NPN SILICON RF POWER TRANSISTOR MSC81035M DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. FEATURES:

• Input matching
• Emitter site Ballasted.
• PG = 10 dB at 35 W/1150 MHz
• Omnigold™ Metalization System MAXIMUM RATINGS IC 3.0 A VCC 55 V PDISS 150 W @ TC ≤ 100 °C TJ -65 °C to +250 °C TSTG -65 °C to +150 °C θθθθJC 1.0 ° O C/W PACKAGE STYLE .250 2L FLG (B) MINIMUM inches / mm 1.050 / 26.67 .120 / 3.05 .245 / 6.22 .552 / 14.02 .790 / 20.07 B C D E F G A MAXIMUM .255 / 6.48 .572 / 14.53 .810 / 20.57 .140 / 3.56 inches / mm H .003 / 0.08 .007 / 0.18 DIM K I J .130 / 3.30 .088 x 45° CHAMFER A B Ø D E F G H I K C J .100 X 45° .285 / 7.24 .210 / 5.33 .120 / 3.05