MSC80196 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25°C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 50 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICEO VCE = 18 V 1.0 mA hFE VCE = 5.0 V IC = 1.0 A 15 120 --- COB VCB = 28 V f = 1.0 MHz 5.0 pF PG VCE = 18 V P OUT = 1.0 W f = 2.0 GHz ICQ = 220 mA 7.0 dB NPN SILICON RF POWER TRANSISTOR MSC80196 DESCRIPTION: The ASI MSC80196 is Designed for Class A Linear Applications up to 2.0 GHz. FEATURES:
- Class A Operation
- PG = 7.0 dB at 1.0 W/2.0 GHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 500 mA VCE 20 V PDISS 10 W TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 17.0 °C/W PACKAGE STYLE .250 2L FLG COMMON EMITTER MINIMUM inches / mm .740 / 18.80 .128 / 3.25 .245 / 6.22 .028 / 0.71 .110 / 2.79 B C D E F G A MAXIMUM .255 / 6.48 .032 / 0.81 .117 / 2.97 .132 / 3.35 inches / mm .117 / 2.97 H .560 / 14.22 .570 / 14.48 DIM K L I J .790 / 20.07 .225 / 5.72 .003 / 0.08 .810 / 20.57 .235 / 5.97 .007 / 0.18 L G I J K H F B E C ØD A NM P .060 x 45° CHAMFER P N M .149 / 3.78 .058 / 1.47 .187 / 4.75 .068 / 1.73 .125 / 3.18