MSC80183 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C TRANS1.SYM SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CER IC = 5.0 mA RBE = 10Ω 44 V BV CBO IC = 1.0 mA 44 V BV EBO IE = 1.0 mA 3.5 V ICBO VCB = 22 V 0.5 mA hFE VCE = 5.0 V IC = 500 mA 30 300 C OB VCB = 22 V f = 1.0 MHz 8.5 pF Pout PG ηηηηC VCC = 22 V PIN = 0.76 W f = 2.3 GHz 7.0 9.6 8.0 10.2 W Db NPN RF TRANSISTOR MSC80183 DESCRIPTION: The ASI MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz. FEATURES:
- Hermetically Sealed Package
- Gold Metallization MAXIMUM RATINGS IC 1.2 A VCC 26 V VEB 3.5 V PDISS 21.4 W @ TC = 50 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 7.0 O C/W PACKAGE 230 2L FLG 1 = Collector 2 = Emitter 3 = Base
A D V A N C E D S E M I C O N D U C T O R, I N C.