MSC8001 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. RF ELECTRICAL SPECIFICATIONS TA = 25 OC TRANS1.SYM SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS MAG MAX AVAILABLE GAIN FREQUENCY = 8.0 GHz 8.5 dB PMAG OUTPUT POWER AT MAG TUNING FREQUENCY = 8.0 GHz 24 dBm HIGH POWER GaAs FET MSC8001 FEATURES INCLUDE:
- 27.5 dBm Output Power with 7db Associated Gain at 8 GHz
- Power Optimized Design Provides High Power-added Efficiency
- Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
- Chip Devices are Selected from Standard Military Grade Wafers
- Hermetic Metal/Ceramic Package Suitable for Hi-Rel Applications
- Custom Electrical Test and Screening Available for Source Control Drawings FET PACKAGE TYPE 30