MSC1150M ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCER IC = 15 mA R BE = 10 Ω 65 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 50 V 12.5 mA hFE VCE = 5.0 V IC = 1.0 A 15 120 --- Cob VCB = 28 V f = 1.0 MHz 80 pF PG ηηηηC VCC = 50 V P OUT = 150 W f = 1025 - 1150 MHz 7.8 8.3 dB NPN SILICON RF POWER TRANSISTOR MSC1150M DESCRIPTION: The ASI MSC1150M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES:
- Internal Input/Output Matching Networks
- PG = 7.8 dB at 150 W/1150 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 11 A VCC 55 V PDISS 400 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θθθθJC 0.3 °C/W PACKAGE STYLE .400 2NL FLG MINIMUM inches / mm .100 / 2.54 .110 / 2.79 .376 / 9.55 .395 / 10.03 B C D E F G A MAXIMUM .396 / 10.06 .407 / 10.34 .130 / 3.30 inches / mm .450 / 11.43 H DIM K L I J .640 / 16.26 .890 / 22.61 .004 / 0.10 .660 / 16.76 .910 / 23.11 .007 / 0.18 H F C E N ØD M G 4x .062 x 45° P L K I J 2X B .025 x 45° A N M .193 / 4.90 .125 / 3.18 .395 / 10.03 .415 / 10.54 P .230 / 5.84