MSC1090M ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1 mA 65 V BVCER IC = 5 mA R BE = 10 Ω 65 V BVEBO IE = 1 mA 3.5 V ICES VCE = 50 V 6.3 mA hFE VCE = 5.0 V IC = 100 mA 5 --- PG ηC VCC = 50 V POUT = 90 W f = 1025 - 1150 MHz PIN = 13 W 8.4 dB NPN SILICON RF POWER TRANSISTOR MSC1090M DESCRIPTION: The ASI MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. FEATURES:
- Internal Input Matching Network
- PG = 8.4 dB at 90 W/1150 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 250 mA VCC 50 V PDISS 290 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.60 °C/W PACKAGE STYLE .250 2L FLG(B) 1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE MINIMUM inches / mm 1.050 / 26.67 .120 / 3.05 .245 / 6.22 .552 / 14.02 .790 / 20.07 B C D E F G A MAXIMUM .255 / 6.48 .572 / 14.53 .810 / 20.57 .140 / 3.56 inches / mm H .003 / 0.08 .007 / 0.18 DIM K I J .130 / 3.30 .088 x 45° CHAMFER A B Ø D E F G H I K C J .100 X 45° .285 / 7.24 .210 / 5.33 .120 / 3.05