MSC1015M

MSC1015M ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCER IC = 10 mA R BE = 10 Ω 65 V BVEBO IE = 1.0 mA 3.5 V ICES VCB = 50 V 2.5 mA hFE VCE = 5.0 V IC = 500 mA 15 120 --- PG ηηηηC VCC = 50 V POUT = 15 W f = 1025 – 1150 MHz PIN = 1.5 W dB Pulse width = 10 µSec, Duty Cycle = 1 % NPN SILICON RF POWER TRANSISTOR MSC1015M DESCRIPTION: The ASI MSC1015M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES:

• Class C Operation
• PG = 10 dB at 15 W/1150 MHz
• Omnigold™ Metalization System MAXIMUM RATINGS IC 1.25 A PEAK VCB 50 V PDISS 88 W PEAK TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 2.0 °C/W PACKAGE STYLE .280 2L FLG 1 = Collector 2 = Emitter 3 = Base 1 2