MSC1004M ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 BVCER IC = 25 mA RBE = 10 Ω 45 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 28 V 1.0 mA hFE VCE = 5.0 V IC = 200 mA 30 300 PG POUT ηηηη VCE = 28 V P IN = 500 mW f = 1025 to 1150 MHz PULSE WIDTH = 10 µS DUTY CYCLE = 1.0% 9.0 4.0 dB W NPN SILICON RF MICROWAVE TRANSISTOR MSC1004M DESCRIPTION: The ASI MSC1004M is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. FEATURES INCLUDE:
- Gold Metalization
- Input Matching
- Emitter Ballasting MAXIMUM RATINGS IC 650 mA VCC 32 V PDISS 18 W @ TC ≤ 100 O C TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 5.0 O C/W PACKAGE STYLE .250 SQ 2L FL 1 = COLLECTOR 2 = EMITTER 3 = BASE