MSB51TK-X MICRO-ELECTRONICS | Alldatasheet
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n 8 (MSBSITK) i ULTRA HIGH a BRIGHTNESS _ RED LED LAMP DESCRIPTION ren, a MSBSITK-X is an ultra high Gs) _10 | | brightness output red GaAlAs LED ie | ET — Lototet f58 lamp encapsulated in a 5mm diameter ryt i on 1 (028) clear transparent lens with an oreo) |} t) 253 voi optimum viewing angle. 6 brightness 1 tS (002) grouping is provided for customer's | i} tp cathode selection. ) _, “80.08 +-2.64(0.1) @ All Dimension in mm (inch) @ No Scale e Tol: +/- 0.3mm ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25°C 100mW Forward Current, DC (IF) 40mA _ Reverse Voltage 5V Operating & Storage Temperature Range -55 to +100°C Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) Forward Voltage VF 18 24 Vv TF=20mA. Reverse Breakdown Voltage BVR 5 v IR=100pA. Luminous Intensity Iv med IF=20mA. 0) 40 60 MSBSITK & -1 60 90 med TF=20mA 2 90 130 med IF=20mA 3 120 180 med IF=20mA. 4 200 400 med IF=20mA 5 350 550 med IF=20mA. Peak Wavelength Ap \\ 660 nm IF=20mA Spectral Line Half Width AR 20 nm IF=20mA \\ Rev.A. -_ MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Building, Kwun Tong, Kowloon, Hong Kong. » es
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