MS808C06 FUJI | Alldatasheet
Document overview
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Technical content
Features
Super high speed switching High reliability by planer design
Applications
High speed power switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol V RRM VRSM Io IFSM Tj Tstg Conditions Sine wave 10ms 200 -40 to +150 -40 to +150 Unit V V A A Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol V FM IRRM Rth(j-c) Conditions IFM=12.5A VR=VRRM Junction to case Max. 0.58 1.2 Unit V mA °C/W tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=118°C Rating 30* SCHOTTKY BARRIER DIODE Outline drawings, mm Connection diagram 1 3 * Average forward current of centertap full wave connection (4.0) (3.2) (2.2) (2.1) (10.1) (5.8) Solder Plating 10.1±0.3 0.4±0.13.6±0.2 1.0±0.2 1.0±0.2 9.0±0.2 7.0±0.2 2.0 2.0 2.5 1.5 31 2 0.1 (0.8) 0.6±0.2
TS808C06 (30A)(60V / 30A ) Characteristics 0.01 0.1 100 Tj=150 o C Tj=125 o C Tj=100 o C Tj=25 o C Forward Characteristic (typ.) IF Forward Current (A) VF Forward Voltage (V) 0 1 02 03 04 05 06 07 0 Reverse Characteristic (typ.) Tj= 25 o C Tj=100 o C Tj=125 o C Tj=150 o C IR Reverse Current (mA) VR Reverse Voltage (V) 02468 1 0 1 2 1 4 1 6 Per 1element DC Square wave λ=180 o Sine wave λ=180 o Square wave λ=120 o Square wave λ=60 o Forward Power Dissipation WF Forward Power Dissipation (W) Io Average Forward Current (A) 0 1 02 03 04 05 06 07 0 Reverse Power Dissipation α =180 o DC PR Reverse Power Dissipation (W) VR Reverse Voltage (V) 0 5 10 15 20 25 30 35 40 45 100 110 120 130 140 150 160 λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection Square wave λ=120 o Square wave λ=60 o Square wave λ=180 o Sine wave λ=180 o DC Current Derating (Io-Tc) Tc Case Temperature ( o C ) Io Average Output Current (A) 360° Io λ 360° VR α VR=30V 360° λ Io 10 100 100 1000 Junction Capacitance Characteristic (typ.) Cj Junction Capacitance (pF) VR Reverse Voltage (V)
TS808C06 (30A)(60V / 30A ) 1 10 100 100 1000 Surge Capability I FSM Peak Half - Wave Current (A) Number of Cycles at 50Hz Transient Thermal Impedance Transient Thermal Impedance ( o C/W ) t Time (sec.)