MS5F5617

MS5F5617 FUJI | Alldatasheet

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Device Name : Type Name : Spec. No. : H04-004-07b MS5F 5617 13 Oct. 30 ’03 S.Ogawa S.Miyashita Y.Seki K.Yamada Oct. 30 ’03 a

R e v i s e d R e c o r d s Date Classi- fication Ind. Content Applied date Drawn Checked Checked Approved Enactment Issued date MS5F 5617 13 Oct.-30 -’03 K.YamadaS.Miyashita Y.Seki a Jan.-16 -’04 Revision a Revised VCE(sat), VF value(P4/13), VF carve(P11/ 13) and Warnings(P12/13, 13/ 13) Issued date K.YamadaS.Miyashita T.HosenS.Ogawa

a 1. Outline Drawing ( Unit : mm ) Type Name : 2MBI300U2B-060 ／ ／ ／ ／ PKG.No. M233 2. Equivalent circuit LABEL

a 3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ） (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5) Terminals 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25 ℃ unless otherwise specified) (*) Biggest internal terminal resistance among arm. Turn-off time Forward on voltage Reverse recovery time Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance - VCE = 20V VCE(sat) (chip) Tj= 25℃ Tj=125℃ Tj= 25℃ Tj=125℃ 23.0 - nF 0.45 1.20 0.60 - µs µsIF = 300A - 0.35 0.97 - a 2.35 a 2.05 - -0 . 1 6 -0 . 4 8 6.7 Units a 1.80 - Maximum Ratings - a 2.10 2.45 nA 2.0 mA 7.7 V 400 6.2 Tstg VGE = 0V Items Symbols VGE=±20V VCE = 0VIGES ICES VCE = 600V -40～ +125 2500between terminal and copper base *1 3.5 3.5 Conditions Storage temperature Isolation voltage Viso Mounting *2 Terminals *2 Screw Torque Unitsmax.typ.min. Characteristics 150 Gate-Emitter voltage Collector current Junction temperature Collector Power Dissipation -Ic 300 600 1000 1ms VAC N・m -Ic pulse Pc Tj A W1 device AC : 1min. V ±20 V Items Symbols Conditions VCESCollector-Emitter voltage VGES 600 Ic Icp 300 600 Continuous -0 . 4 0 -0 . 2 2 - a 1.90VGE=0V - a 2.30 V a 1.65 1.20 a 1.60 - a 1.95 - ｔｒｒ - VF (chip) Tj= 25℃ - Tj=125℃IF = 300A - tr (i) Tj=125℃ VGE=±15V 0.07 toff tf Rg = 9.1 Ω VF (terminal) Tj= 25℃ VGE(th) VCE(sat) (terminal) Vcc = 300V Ic = 300A Ic = 300mA Cies VCE=10V,VGE=0V,f=1MHz VGE=15V Ic = 300A ton trTurn-on time Zero gate voltage Collector current Gate-Emitter leakage current Lead resistance, terminal-chip * mΩR lead -

a 5. Thermal resistance characteristics ※ This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module 7.Applicable category This specification is applied to IGBT Module named 2MBI300U2B-060 . 8.Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35 ℃ and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box ℃/W 300A 600V 2MBI300U2B-060 - 0.125 - - 0.23 IGBT FWD Thermal resistance(1device) Contact Thermal resistance Rth(j-c) Rth(c-f) with Thermal Compound ( ※) - 0.025 Unitsmin. typ. max.Items Symbols Conditions Characteristics Logo of production Lot.No. Place of manufacturin g (code) L Vcc Ic VCE RG VGE VGE VCE Ic0V 10% 90% 10% 10% 90% 90% Ic VCE onononontttt rrrrtttt r(i)r(i)r(i)r(i)tttt offoffoffofftttt fffftttt rrrrrrrrIIII rrrrrrrrtttt

a Reliabilit y Test Items Test cate- gories Test items Test methods and conditions Reference norms EIAJ ED-4701 (Aug.-2001 edition) Number of sample Accept- ance number

1 Terminal Strength Pull force : 20N Test Method 401 5 ( 0 : 1 )

(Pull test) Test time : 10±1 sec. Method Ⅰ 2 Mounting Strength Screw torque : 2.5 ~ 3.5 N ･m (M5) Test Method 402 5 ( 0 : 1 ) Test time : 10±1 sec. method Ⅱ

3 Vibration Range of frequency : 10 ~ 500Hz Test Method 403 5 ( 0 : 1 )

Sweeping time : 15 min. Reference 1 Acceleration : 100m/s 2 Condition code B Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction)

4 Shock Maximum acceleration : 5000m/s 2 Test Method 404 5 ( 0 : 1 )

Pulse width : 1.0msec. Condition code B Direction : Each X,Y,Z axis Test time : 3 times/direction 1 High Temperature Storage temp. : 125±5 ℃ Test Method 201 5 ( 0 : 1 ) Storage Test duration : 1000hr. 2 Low Temperature Storage temp. : -40±5 ℃ Test Method 202 5 ( 0 : 1 ) Storage Test duration : 1000hr. 3 Temperature Storage temp. : 85±2 ℃ Test Method 103 5 ( 0 : 1 ) Humidity Relative humidity : 85±5% Test code C Storage Test duration : 1000hr. 4 Unsaturated Test temp. : 120 ±2 ℃ Test Method 103 5 ( 0 : 1 ) Pressure Cooker Atmospheric pressure : 1.7 × 10 5 Pa Test code E Test humidity : 85±5% Test duration : 96hr.

5 Temperature Test Method 105 5 ( 0 : 1 )

Cycle Test temp. : Low temp. -40 ±5 ℃ High temp. 125 ±5 ℃ RT 5 ~ 35 ℃ Dwell time : High ~ RT ~ Low ~ RT Number of cycles : 100 cycles

6 Thermal Shock +0 Test Method 307 5 ( 0 : 1 )

Test temp. : High temp. 100 -5 ℃ method Ⅰ +5 Condition code A Low temp. 0 -0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles Mechanical TestsEnvironment Tests 11. Reliability test results

a Reliability Test Items Test cate- gories Test items Test methods and conditions Reference norms EIAJ ED-4701 (Aug.-2001 edition) Number of sample Accept- ance number

1 High temperature

Test Method 101 5 ( 0 : 1 ) Reverse Bias Test temp. : Ta = 125 ±5 ℃ (Tj ≦ 150 ℃) Bias Voltage : VC = 0.8×VCES Bias Method : Applied DC voltage to C-E VGE = 0V Test duration : 1000hr.

2 High temperature Test Method 101 5 ( 0 : 1 )

Bias (for gate) Test temp. : Ta = 125 ±5 ℃ (Tj ≦ 150 ℃) Bias Voltage : VC = VGE = +20V or -20V Bias Method : Applied DC voltage to G-E VCE = 0V Test duration : 1000hr.

3 Temperature Test Method 102 5 ( 0 : 1 )

Humidity Bias Test temp. : 85±2 oC Condition code C Relative humidity : 85±5% Bias Voltage : VC = 0.8×VCES Bias Method : Applied DC voltage to C-E VGE = 0V Test duration : 1000hr. 4 Intermitted ON time : 2 sec. Test Method 106 5 ( 0 : 1 ) Operating Life OFF time : 18 sec. (Power cycle) Test temp. : ∆ Tj=100±5 deg ( for IGBT ) Tj ≦ 150 ℃, Ta=25±5 ℃ Number of cycles : 15000 cycles Endurance TestsEndurance Tests Failure Criteria Item Characteristic Symbol Failure criteria Unit Note Lower limit Upper limit Electrical Leakage current ICES - USL×2 mA characteristic ±IGES - USL×2 µA Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA Saturation voltage VCE(sat) - USL×1.2 V Forward voltage VF - USL×1.2 V Thermal IGBT ∆ VGE - USL×1.2 mV resistance or ∆ VCE FWD ∆ VF - USL×1.2 mV Isolation voltage Viso Broken insulation - Visual Visual inspection inspection Peeling - The visual sample - Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.

a Reliability Test Results Test cate- gorie s Test items Reference norms EIAJ ED-4701 (Aug.-2001 edition) Number of test sample Number of failure sample

1 Terminal Strength Test Method 401 50

(Pull test) MethodⅠ

2 Mounting Strength Test Method 402 50

methodⅡ 3V i b r a t i o n Test Method 403 50 Condition code B

4 Shock Test Method 404 50

1 High Temperature Storage Test Method 201 50

2 Low Temperature Storage Test Method 202 50

3 Temperature Humidity Test Method 103 50

4 Unsaturated Test Method 103 50

Pressure Cooker Test code E

5 Temperature Cycle Test Method 105 50

6 Thermal Shock Test Method 307 50

method Ⅰ Condition code A

1 High temperature Reverse Bias Test Method 101 50

2 High temperature Bias Test Method 101 50

( for gate )

3 Temperature Humidity Bias Test Method 102 50

4 Intermitted Operating Life Test Method 106 50

(Power cycling) ( for IGBT ) Mechanical TestsEnvironment TestsEndurance Tests

a Collector current vs. Collector-Emitter voltage (typ.) Tj= 125℃ / chip Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25℃ / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=25 ﾟC / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Vcc=300V， Ic=300A，Tj= 25℃ 150 300 450 600 750 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 150 300 450 600 750 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 150 300 450 600 750 01234 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Tj=125 ℃Tj=25℃ 5 1 01 52 02 5 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Ic=600A Ic=300A Ic=150A 0.1 1.0 10.0 100.0 01 0 2 0 3 0 Capacitance : Cies Coes Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 0 500 1000 1500 Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Gate charge : Qg [ nC ] VGE VCE

Vcc=300V, Ic=300A, VGE=±15V, Tj= 125℃ Reverse bias safe operating area (max.) Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9.1Ω, Tj= 25℃ Vcc=300V, Ic=300A, VGE=±15V, Tj= 25℃ Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9.1Ω, Tj=125℃ Switching time vs. Gate resistance (typ.) +VGE=15V,-VGE≦15V, RG≧9.1Ω ,Tj≦125℃ Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9.1Ω Switching loss vs. Gate resistance (typ.) 100 1000 10000 0 150 300 450 600 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] tr tf toff ton 100 1000 10000 0 150 300 450 600 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] tr tf toff ton 100 1000 10000 1.0 10.0 100.0 Switching time : ton, tr, toff, tf [ nsec ] Gate resistance : Rg [ Ω ] tr tf toff ton 0 150 300 450 600 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] Eon(125℃) Eon(25℃) Eoff(125℃) Err(125℃) Err(25℃) Eoff(25℃) 1.0 10.0 100.0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ Ω ] Eoff Err Eon 150 300 450 600 750 0 200 400 600 800 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ]

a Transient thermal resistance (max.) Reverse recovery characteristics (typ.) Vcc=300V, VGE=±15V, Rg=9.1 Ω a Forward current vs. Forward on voltage (typ.) chip 150 300 450 600 750 0123 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=125 ℃ Tj=25℃ 100 1000 0 150 300 450 600 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] trr (125℃) Irr (125℃) Irr (25℃) trr (25℃) 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ ℃/W ] Pulse width : Pw [ sec ] FWD IGBT

a Warnings This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず 付けて火災，爆発，延焼等の２次破壊を防いでください。 Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命 を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 When electric power is connected to equipments, rush current will be flown through rectifying diode to charge DC ca pacitor. Guaranteed value of the rush current is s pecified as I 2t (non-repetitive ), however fre quent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary. 電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は I2t(非繰返し)として表記されていますが、この突入電流が頻繁に流れると I2t破壊とは別に整流用ダイオードの繰返し負荷に よるパワーサイクル耐量破壊を起こす可能性があります。突入電流が頻繁に流れるようなアプリケーションでは、突入電流値 を抑えるなど、製品寿命に十分留意してご使用下さい。 If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。 Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. 本製品は、パワーサイクル寿命カーブ以下で使用下さい (技術資料No.: MT5F 12959)。パワーサイクル耐量にはこのΔ Tjによる 場合の他に、Δ Tcによる場合があります。これはケース温度 (Tc)の上昇下降による熱ストレスであり、本製品をご使用する際 の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。 Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合があります。 Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 冷却フィンはネジ取り付け位置間で平坦度を 100mm で100um以下、表面の粗さは 10um以下にして下さい。 過大な凸反り があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、 本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。 In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) 素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、 塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。 コンバウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。 (実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。 ) It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡が RBSOA仕様内にあることを確認して下さい。 RBSOAの範囲を超えて使用すると素子が破壊 する可能性があります。 a

a - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。 - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。 - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) 逆バイアスゲート電圧 -VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に -VGEは十分な値で 設定して下さい。 （推奨値 : -VGE = - 15V) a- In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ 条件（+VGE, -VGE, RG 等）でご使用下さい。 a- This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。 VCEは必ず絶対定格の範囲内 でご使用下さい。 CautionsCautionsCautionsCautions - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保 のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、 本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.