F5033 FUJI | Alldatasheet
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, SPECIFICATION : Device Nata i Inte LLigent Power MOSFET ; Type Name : F5033 Ae . Spec. ito. : MS5 F4299 Gabe] ; . 4x425 fngit ahiaé ; . rin 225s2 | . . Fuji Electric Co.,Ltd. : ; ; Matsumoto Factory pen 2 Ta . —4 | i on a LA Zc ELMSSF42g7 % FH | : HO4-004-07
Revised Records : j pate |ctassi- | Ind | content applied | Dram | Checked | Approved i ! fication date dortl- | j | Issued | rot ; 1-1998 | enactment | —_—\\— | ore _ 4 g F al 3 Fiabe | | | i \\ . i SXES [tf ifs tie | iG £ 4 s3ife { y ; { p2uae : : : 2ydi's Bsdis | \\ eg :8e : e323: f5ege 3238 | | SHEE | | ee Fuji Flectric Co_Lid.. z 5F4292 3 HOd-W4-06 ~
5 _ 1, Scope This specifies Fujé Intelligent Power MOSFET F590 33 :
2 Construction
Output Part: N-channel enhancement mode poner MUSFET . 3. Apal ication . For switching 4, Outview ‘ SOP-S(EIAJ SC-87) Dutview See ta $/12 page} 3. Absofute maxioum ratings {at Tj=25°C, unless otherwise specified, } : Drain-soures voltage Vass 40 ¥ oc Gate-source voltage : i Vess DC~-@3~T.0] ¥ oc i £ Cont inuous drain currant le 1 A | —_———._,, HE Maximum power dissipation Po i 15 | w | 2 zas 7 cH s Operating junction temperature | Ta | 150 | Ke) _—_ $ : FS £36 - . HA HE + Surface Mounted on 1000mm™PCB(FR-4) Pree : Hii 6 Electrical characteristics (at Tj=25 C.unless otherwise specified. } SEEE - 7 oo838 : Characteristics i 5SEs* Description Symbol Conditions + Unit | EegES . i Min, | Typ. | Max. biog SPER Drain-source | Voss {lo =imA 40 6a | ¥ clam voltage : }Ves=0V : Gate threshold voltage | Vestn | lo =f OmA £0 28 v . Vos=t9V - fara mere [van | fas| [ae |v] Zero gate voltage Vos=30¥ | | 10 | ma! drain current Vos=0V H i : | Gate-source Ltasin | | | | 500] eat i leakage current Vos=5V j | Town [| CAEL Drain-source Rosion | lp =O5A 600!ma on-state resistance Vor=O¥ : * Under normal operation + Under self protection - Fuji Electric Co.,Lid. 2) MS5SF4292 7%. ao H04~004-03
| _ Characteristics! | : Description Syabo! Conditions Unit Hin, Typ, | Wax. ! (o=05A |} Turnoff time tes |Vesx5¥ | ; 50] w8 j Over-temerature i Tee | Ver ¥ /1150! cc | i Protection | i | Short circuit petection les ! Ves=5V t | A Single putse inductive : load switch-of f Ee. T, =150 25 imi eneroy dissipation ; . | | 7. Thermal resistance : RE Description Symbol! Conditions T Unit | EEE L : ‘ zyiis Theraal resistance ! Rthu-u| Junetion-asbient + | | | ga cal : Hi + Surface Mounted on 100Gen?PCB(FR-4) : Pegis gts 8. Electrostatic discharge giesf f ; ait Description Condi tions 2ys2t 9, Timing chart Under normal operation Short circuit: over-temperature Under normal : Hpratection protection operation | | a. ~ —— ae le => NN = > 2 . : 4 4 Fuji Electric Co.Ltd. *| MS5SF49q9 4%. 4 HO4-004-03
- Block diagram DRAIN © 1 | wg LS = | Zs ah
1 Over- Short ‘ Contorol H 4
Ww tempecatura + cirouit logic per | protection protection | : | : : : SEER ; . SOURCE © Sse . . 5 iss . pile So . tie Fuji Electric Co,Ltd. i MS5F4292 (EE . $4-004-03
FUJi INTELLIGENT POWER MOS FET TYPE : F3033 XI: . eg! ® 0, © @ 3] © Sy 4 ft Type name ~ ! | 5033 ‘ bog Lot No. | | S fos r--5 | =] a bite i it ORORECR i Pre-solder | g2ess 5+0, Q : Farry _ fill m} i r oT g — CONNECTION £015 Hi — rereos| | sj @® Source] @ GATE} RECOMMENDED PATTERN.OF SOLDERING FADS. ( souace 2 a @ GATE 2 tote =] “ESE & © DRAIN 2. har i ' @ © DRAIN TT ia) wm it . ape HEHEHE} EIAd : SC: 7 DIMENSIONS ARE §N MILLIMETERS. Fuji Electric Co.utd. —(g| MS5F4292 —%
Drain-source clamp voltage » VoSS=f (Tj) :1Ds1mA, VGS=0¥ G0 peveeccteecccecdee nese ch ete ec ede tener cbosees 5 : : i. ‘typ. 8 40 a el ee ne a : ‘ : > . 7 1 ‘ :
90 Eee evcceeeeechoceteerhesceaedeceoteabecees
Ro : : : : : . g2z3 0 1 1 2 . thy “0 50 oO 3.2 O10:tC«aHC Hig vee) ; a eitid Gate threshold voltage e2hst 9 N88 (th) =# (TI) VDS=ISY. 1D=1 OmA . SFis : aogee : : : : : Pasye . Sy : : : ‘ raso} : : ' : ' 23334 ; ‘ ' : : x OT : g : : : , Cae a a Te T jE] : " Lot Fuji Electric Co.,Ltd. ;| MS5F4292)0 (2 =
Gate-source |eakage current . 1S (n}=F (Tj) :¥GS=5¥, VDS=0¥ ,
250 T 7 7
, oe 450 seceedeceeety gittehenerscdassenecborens & : : . : : 3 100 dete aceecceeeterecc con etares teeth ras ZEss ' ' : : ' aa: . ri: ebe _ il Gate-source leakage currént list IGS (nJ=F (VBS) : T]=25°C, VDS=0V - arity 250 oT 7 v7 7 Bugis : : ' : : afin} : : : igi —— 3 repre mpm : aaauee : 8 rn 7 8 ¥GS[¥] , Fuji Electric Co.,Ltd. FI MS5F 42992 Ye —
Drain-source on-stata resistance . RDS (on) =F (Tj): ID=0. 5A, VGS=5V 1000 at = a 900 fe eevsseeecoeedesessesbeesseegessrerapesee les) th a hee ne ane = : : : fe ; typ. ; BOD Brrr sees te rere seeeees ceases sy tierr| a B00 Boone och eee ee beeeee eee noe Cvvevben ed : & E : : - : : 5 > BOG Bere reciec cre ccdereeeeates Octet & : : , : : fe : , : : : 300 sors: Beep eeeeersbessccedesseerez cscs: . . ath. Soa -50 0 50 100-150 200 iilja : Til) —iiils ; Drain-source on-state resistance bass RDS (on) =f (VGS) :|D=0.5A, Tj=25°C zaitt 800 rT 23333 £ : : : : : aziz: 700 a : : : : 23542 ” ' 4 . . w2kas 600 Sverre caer eee ceswomsarocccasceseanera cn
500 Ecce eechgec coe dese eeech ese ersdececcecbenees
~ ; : : : . tyr. . 3 400 otbictistiheeedersbneed %5 a 4 5 6 ? 8 ; ¥Gs LV] Fuji Electric Co.,Ltd. i| WS5F4292 30-44
. Zero gate voltage drain current : . lDSS=f (Tj): VDS=13V. 30V, VGS=0V SOF TTT rm i c ‘ ' ‘ ' : BO fr-nencees enon dese cecebeserecdeaseeneg vores 40 reste oebereee tebe teredacsenerbenees & 30 wrt etpre scr cater Kc ett ee tweed aves cen eevee . 2 : : : : ! a : ; . i i “OE : : : 1 ¥OSES0¥ typ. oe . 1 ' 4 ’ 2 wali : ‘ ; ; VbS=13¥ "a Bn ' : : : : 3 S23 1) 7 tt fet fab “100-50 0 50. 100-150) 200 $3183 ° , Tj(*C] : ail Turn-on time, Turn-off time Hig gg Lon toffet (71) :VOS=13V, 1D=0, SA, VES=5V arid : : : ‘, 2 typ. 10 conse a : : : : : ha : ‘ ‘ : , RYP. 8 : : : : : ol -100 +50 0 50 100 180-2000 Til} ~ = it Fuji Electric Co.,Ltd, 2} MS5F4292 9%. EH
Short circuit proetection ; ; 1OG= F(T j) :VGS=5¥ a : : : : : 3 : : : : : 2 Joo orrcgesstecapecsessqes sss scp yess | ee 8 : : ‘ he ie : pt : : | e073 : : : : 3 izii pue ids S 2a} So -30 ~~ 50 100 760 200 . tit ° Tit? ; , pal Short circuit protection grizt 10G=F(VGS) : Tjx25°C . = Ede 5 Sn T 5tEsS : : : : : ze : ; ~ 3 tort vo oesegeaesesemoersccgecsscseze sess . oF 3 4 5 8 7 8 . ves [V¥} - - 1 Fuji Electric Co.,Ltd. i MS5F4292 vem i
Forward charateristic of reverse of diode : IF=f (VSD) ;¥OS=0V 4 - T T 7 i b : : Pest : : . ride go ° 0.5 T.8 8 aide qizze YSDEY] ~ ERize ; : : 3Przt Continuous drain current ¥S Anbient temperature | ered HD=f (Ta) :Maunting Pad Size (8 )=5am qari: any : 1,0 - 5q973 ‘ : : . ' . Soklt 2ch Simul taneaus operation | D(1ch: : Ersié ' : ‘ : : re : H ‘ ie asm é é : : tome AOE aed nn . 0.90 - oO 25 50 75 EOD 125 150 . Tai'C] : . o 7 : fF Fuji Electric Co.,Ltd. ‘l MSS F42992 © ‘a: Cee HO-D54-D2