MS2608 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 7.0 mA 55 V BVCER IC = 7.0 mA RBE = 10 Ω 55 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 40 V 5.0 mA hFE VCE = 5.0 V IC = 600 mA 30 150 --- PG ηC VCC = 40 V POUT = 12 W f = 2.7 to 3.1 GHz 6.0 dB Note: Pulse Widht = 100 µS Duty Cycle = 10 % NPN SILICON RF MICROWAVE TRANSISTOR MS2608 DESCRIPTION: The ASI MS2608 is Designed for pulsed S- Band radar applications from 2.7 to 3.1 GHz. FEATURES:

  • Internal Input/Output Matching Network
  • PG = 6.0 dB at 12 W/2.7-3.1 GHz
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCC 46 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 4.0 °OC/W PACKAGE STYLE .400 2L FLG 1 = COLLECTOR 2&3 = BASE 4 = EMITTER MINIMUM inches / mm .395 / 10.03 .140 / 3.56 B C D E F G A MAXIMUM .230 / 5.84 .407 / 10.34 inches / mm H .118 / 3.00 .131 / 3.33 DIM K L I J .386 / 9.80 O P Q R N M .450 / 11.43 .050 / 1.27 .110 / 2.80 .193 / 4.90 .900 / 22.86 .650 / 16.51 .063 / 1.60 .125 / 3.18 .170 / 4.32 .062 / 1.58 .405 / 10.29 .110 / 2.80 J PG M C B D HF N Q I O K E Ø.120 A .062 x 45° R L 2 3