MS2601 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCER IC = 1.0 mA 45 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 30 V 0.5 mA hFE VCE = 5 V IC = 100 mA 10 150 --- POUT PG ηηηηC VCC = 30 V PIN = 0.3 W f = 2700 to 3100 MHz Pulse Width = 100 µS Duty Cycle = 10% 1.0 5.2 W dB NPN RF POWER TRANSISTOR MS2601 DESCRIPTION: The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz. FEATURES INCLUDE:
- ••• Input/Output Matching
- Gold Metallization
- ••• Emitter Ballasting MAXIMUM RATINGS IC 0.45 A VCC 34 V PDISS 11.5 W @ TC = 25 °C TJ -65 °C to+200 °C TSTG -65 °C to+200 °C θθθθJC 13.0 °C/W PACKAGE STYLE 400 x 400 2NL FLG 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER 2 4