MS2441 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/3
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 25 mA 65 V BVCES IC = 50 mA 65 V BVEBO IE = 10 mA 3.5 V ICES VCE = 50 V 25 mA hFE VCE = 5.0 V IC = 0.25 A 10 200 --- PG ηηηηC VCC = 50 V POUT = 400 W f = 1025 - 1150 MHz PIN = 90 W 6.5 dB Pulse Width = 10 µsec, Duty Cycle = 1 % NPN SILICON RF POWER TRANSISTOR MS2441 DESCRIPTION: The ASI MS2441 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. FEATURES:
- Internal Input/Output Matching Networks
- PG = 6.5 dB at 400 W/1150 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 22 A VCBO 65 V VCES 65 V PDISS 1458 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 0.12 °C/W PACKAGE STYLE .400 2L FLG (A) COMMON BASE CONFIGURATION MINIMUM inches / mm .100 / 2.54 .376 / 9.55 .050 / 1.27 .110 / 2.79 B C D E F G A MAXIMUM .120 / 3.05 .130 / 3.30 .396 / 10.06 inches / mm .193 / 4.90 H DIM K L I J .490 / 12.45 .690 / 17.53 .003 / 0.08 .510 / 12.95 .710 / 18.03 .006 / 0.18 N M P .230 / 5.84 G C N 2xR 4x .062 x 45° I E P M F L H J K 2xB D .040 x 45°A .100 / 2.54 .395 / 10.03 .407 / 10.34 .890 / 22.61 .910 / 23.11
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/3
ERROR! REFERENCE SOURCE NOT FOUND. Specifications are subject to change without notice. MS2441
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 3/3
ERROR! REFERENCE SOURCE NOT FOUND. Specifications are subject to change without notice. MS2441