MRW54001 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 22 V BVCES IC = 10 mA 50 V BVCBO IC = 1.0 mA 45 V BVEBO IE = 250 µA 3.5 V ICBO VCB = 28 V 250 µµµµA hFE VCE = 5.0 V IC = 100 mA 20 120 --- ft VCE = 20 V IE = 120 mA 4.0 4.5 GHz Cob VCB = 28 V f = 1.0 MHz 3.5 pF GPE LG VCE = 20 V I CQ = 120 mA Pout = 0.5 W f = 2.0 GHz -0.2/+1.0 dB NPN SILICON RF POWER TRANSISTOR MRW54001 PACKAGE STYLE .200 4L PILL 1 = Collector 3 = Base 2 & 4 = Emitter UNIT b B 1 c D D 1 D 2 H mm 1.63 1.38 0.81 0.71 0.16 0.10 3.38 3.08 5.28 5.12 5.23 5.13 inches 0.065 0.055 0.032 0.028 0.006 0.004 0.133 0.121 0.208 0.202 0.206 0.202 0.75 0.67 DESCRIPTION: The ASI MRW54001 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz. FEATURES:
- Omnigold™ Metalization System
- Implanted ballast resistors
- Common-Emitter MAXIMUM RATINGS I 160 mA VCEO 22 V VCES 50 V TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 40 °C/W