MRW2020 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 160 mA 50 --- --- V BVEBO IE = 2.0 mA 3.5 --- --- V ICBO VCB = 28 V --- --- 2.0 A hFE VCE = 5.0 V IC = 800 mA 10 --- 100 --- Cob VCB = 28 V f = 1.0 MHz --- --- 24 pF GPB ηηηηC VCC = 28 V P OUT = 20 W f = 2.0 GHz 5.2 --- --- --- --- dB ΨΨΨΨ VCC = 28 V f = 2.0 GHz Load VSWR = ∞ :1, All Phase Angles No Degradation in Output Power NPN SILICON RF POWER TRANSISTOR MRW2020 DESCRIPTION: The ASI MRW2020 is a high performance common base RF power transistor intended for 28V operation across the 1 to 2.3 GHz frequency range. FEATURES:
- Gain: 5.2 dB Min. at 20 W
- Output Power: 20 W
- Diffused Ballast Resistors
- Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCES 50 V VEBO 3.5 V PDISS 60 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 3.0 °C/W PACKAGE STYLE .250X.300 2L FLG