MRF962

MRF962 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 1.0 mA 15 V BVCBO IC = 100 µA 20 V BVEBO IE = 100 µA 3.0 V ICBO VCB = 10 V 100 nA hFE VCE = 10 V IC = 50 mA 30 200 --- CCB VCB = 10 V f = 1.0 MHz 1.2 1.5 pF ft VCE = 10 V I C = 50 mA f = 0.5 GHz 4.5 GHz NF VCE = 10 V IC = 10 mA f = 0.5 GHz 2.0 dB NPN SILICON RF TRANSISTOR MRF962 DESCRIPTION: The ASI MRF962 is designed for Low-to-medium power amplifier applications, requiring high gain, low noise figure, and low intermodulation distortion. FEATURES:

• NF = 2.0 dB
• Omnigold™ Metalization System
• Hermetic stripline, ceramic package MAXIMUM RATINGS IC 100 mA VCB 20 V PDISS .75 W @ TC = 100 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 133 °C/W PACKAGE STYLE MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.44 5.21 0.175 0.205 C 1.90 2.54 0.075 0.100 D 0.84 0.99 0.033 0.039 F 0.20 0.30 0.008 0.012 G 0.76 1.14 0.030 0.045 K 7.24 8.13 0.285 0.320 L 10.54 11.43 0.415 0.450 N -- 1.65 -- 0.065 1 = COLLECTOR 2 = EMITTER 3 = BASE