MRF951 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 0.1 mA 20 V BVCEO IC = 0.1 mA 10 V ICBO VCB = 10 V 0.1 µA IEBO VEB = 1.0 V 0.1 µA hFE VCE = 6.0 V IC = 5.0 mA 50 200 --- Ccb VCB = 10 V f = 1.0 MHz 0.45 pF GNF VCE = 6.0 V I C = 5.0 mA f = 1.0 GHz f = 2.0 GHz 9.0 dB NPN SILICON RF TRANSISTOR MRF951 DESCRIPTION: The ASI MRF951 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.0 GHz. FEATURES:
- Low Noise Figure
- High Gain
- Omnigold™ Metalization System MAXIMUM RATINGS IC 100 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θθθθJC 100 °C/W PACKAGE STYLE Dim. Are in mm Leads 1 and 3 = Emitter 2 = Collector 4 = Base