MRF894 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 Ma 48 55 --- V BVCER IC = 40 mA R BE = 150 Ω 30 40 --- V BVCEO IC = 40 mA 25 28 --- BVEBO IE = 10 mA 3.5 5.0 --- V ICBO VCE = 24 V 10 --- --- mA hFE VCE = 20 V IC = 2.0 A 15 40 100 --- COB VCB = 25 V f = 1.0 MHz 42 50 pF PG IMD3 ηC VCE = 25 V I CQ = 60 mA f = 860 MHz POUT = 30 W f1 = 860.0 MHz f2 = 860.1 MHz 7.5 9.0 -35 --- dB dBc NPN SILICON RF POWER TRANSISTOR MRF894 DESCRIPTION: The ASI MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application. FEATURES:

  • Internal Input Matching Network
  • PG = 7.5 dB at 30 W/960 MHz
  • Omnigold™ Metalization System
  • ηC = 55 % Typ.
  • = Load mismatch capability 20:1 MAXIMUM RATINGS IC 7.5 A VCBO 48V VCEO 25 V VEBO 3.5 V PDISS 88 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.0 °C/W PACKAGE STYLE .230 6L FLG MINIMUM inches / mm .115 / 2.92 .225 / 5.72 .075 / 1.91 .090 / 2.29 .720 / 18.29 B C D E F G A MAXIMUM .085 / 2.16 .110 / 2.79 .730 / 18.54 .235 / 5.97 inches / mm .125 / 3.18 H .355 / 9.02 DIM K L I J .004 / 0.10 .120 / 3.05 .230 / 5.84 .006 / 0.15 .130 / 3.30 .260 / 6.60 K 4X .025 R .040x45° .115 I .125 E .430 D H G F J C A B 2XØ.130 L .980 / 24.89.970 / 24.64 .365 / 9.27